Polarity Reversal of Terahertz Electric Field from Heavily p-Doped Silicon Surfaces
Hai-Zhong Wu1† , Quan Guo2† , Yan-Yun Tu1 , Zhi-Hui Lyu1 , Xiao-Wei Wang1 , Yong-Qiang Li1 , Zhao-Yan Zhou1 , Dong-Wen Zhang1* , Zeng-Xiu Zhao1 , and Jian-Min Yuan1,3*
1 College of Liberal Arts and Sciences, National University of Defense Technology, Changsha 410073, China2 Northwest Institute of Nuclear Technology, Xi'an 710024, China3 Graduate School of China Academic of Engineering Physics, Beijing 100193, China
Abstract ：Above-band-gap optical excitation of electron-hole pairs screens the doping-induced surface electric field and generates terahertz (THz) pulses via free-carrier transport. THz emission from a heavily doped silicon surface is much weaker than that of lightly doped samples. A polarity reversal of the THz electric field is observed in heavily doped p-type silicon, indicating that the doping related and carrier induced surface electric fields oppose each other. By comparing the penetration depth of the excitation laser with the thickness of the depletion layer for the doped silicon, it is shown that competition between diffusion and drift current causes the polarity reversal.
收稿日期: 2021-04-01
出版日期: 2021-07-03
引用本文:
. [J]. 中国物理快报, 2021, 38(7): 74201-.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/38/7/074201
或
https://cpl.iphy.ac.cn/CN/Y2021/V38/I7/74201
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2021, Vol. 38 
