Abstract：The modulation of electrical properties of MoS$_{2}$ has attracted extensive research interest because of its potential applications in electronic and optoelectronic devices. Herein, interfacial charge transfer induced electronic property tuning of MoS$_{2}$ are investigated by in situ ultraviolet photoelectron spectroscopy and x-ray photoelectron spectroscopy measurements. A downward band-bending of MoS$_{2}$-related electronic states along with the decreasing work function, which are induced by the electron transfer from Cs overlayers to MoS$_{2}$, is observed after the functionalization of MoS$_{2}$ with Cs, leading to n-type doping. Meanwhile, when MoS$_{2}$ is modified with 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane ($F_{4}$-TCNQ), an upward band-bending of MoS$_{2}$-related electronic states along with the increasing work function is observed at the interfaces. This is attributed to the electron depletion within MoS$_{2}$ due to the strong electron withdrawing property of $F_{4}$-TCNQ, indicating p-type doping of MoS$_{2}$. Our findings reveal that surface transfer doping is an effective approach for electronic property tuning of MoS$_{2}$ and paves the way to optimize its performance in electronic and optoelectronic devices.
收稿日期: 2020-11-25
出版日期: 2021-05-02
引用本文:
. [J]. 中国物理快报, 2021, 38(5): 57305-.
Si-Han Zhou , Chun-Wei Zhou , Xiang-Dong Yang , Yang Li , Jian-Qiang Zhong, and Hong-Ying Mao. Interfacial Charge Transfer Induced Electronic Property Tuning of MoS$_{2}$ by Molecular Functionalization. Chin. Phys. Lett., 2021, 38(5): 57305-.
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2021, Vol. 38 
