Highly Robust Reentrant Superconductivity in CsV$_{3}$Sb$_{5}$ under Pressure
Xu Chen1†, Xinhui Zhan2†, Xiaojun Wang2, Jun Deng1, Xiao-Bing Liu2*, Xin Chen2, Jian-Gang Guo1,3*, and Xiaolong Chen1,3*
1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China 2Laboratory of High Pressure Physics and Material Science (HPPMS), School of Physics and Physical Engineering, Qufu Normal University, Qufu 273100, China 3Songshan Lake Materials Laboratory, Dongguan 523808, China
Abstract：We present the superconducting (SC) property and high-robustness of structural stability of kagome CsV$_{3}$Sb$_{5}$ under in situ high pressures. For the initial SC-I phase, its $T_{\rm c}$ is quickly enhanced from 3.5 K to 7.6 K and then totally suppressed at $P \sim 10$ GPa. With further increasing pressure, an SC-II phase emerges at $P \sim 15$ GPa and persists up to 100 GPa. The $T_{\rm c}$ rapidly increases to the maximal value of 5.2 K at $P=53.6$ GPa and slowly decreases to 4.7 K at $P=100$ GPa. A two-dome-like variation of $T_{\rm c}$ in CsV$_{3}$Sb$_{5}$ is concluded here. The Raman measurements demonstrate that weakening of $E_{\rm 2g}$ mode and strengthening of $E_{\rm 1g}$ mode occur without phase transition in the SC-II phase, which is supported by the results of phonon spectra calculations. Electronic structure calculations reveal that exertion of pressure may bridge the gap of topological surface nontrivial states near $E_{\rm F}$, i.e., disappearance of $Z_{2}$ invariant. Meanwhile, the Fermi surface enlarges significantly, consistent with the increased carrier density. The findings here suggest that the change of electronic structure and strengthened electron-phonon coupling should be responsible for the pressure-induced reentrant SC.
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2021, Vol. 38 
