中国物理快报  2021, Vol. 38 Issue (4): 47301-047301    DOI: 10.1088/0256-307X/38/4/047301
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Emergence of Chern Insulating States in Non-Magic Angle Twisted Bilayer Graphene
Cheng Shen1,2, Jianghua Ying1,2, Le Liu1,2, Jianpeng Liu3,4, Na Li1,2,6, Shuopei Wang1,2,6, Jian Tang1,2, Yanchong Zhao1,2, Yanbang Chu1,2, Kenji Watanabe7, Takashi Taniguchi8, Rong Yang1,5,6, Dongxia Shi1,2,5, Fanming Qu1,2,6, Li Lu1,2,6, Wei Yang1,2,6*, and Guangyu Zhang1,2,5,6*
1Beijing National Laboratory for Condensed Matter Physics; Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
2School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
3School of Physical Sciences and Technology, ShanghaiTech University, Shanghai 200031, China
4ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 200031, China
5Beijing Key Laboratory for Nanomaterials and Nanodevices, Beijing 100190, China
6Songshan-Lake Materials Laboratory, Dongguan 523808, China
7Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
8International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan