Abstract：Few-layered gallium selenide (GaSe) is obtained by using the mechanical exfoliation method, and its properties are characterized by photoluminescence and Raman spectroscopy. The pressure-dependent phonon scatterings of bulk, few-layered, oxidized few-layered GaSe are characterized up to 30 GPa by using a diamond anvil cell with inert argon used as the pressure transmission medium. All the GaSe samples processed a phase transition around 28 GPa. A new vibration mode at 250 cm$^{-1}$ is found in oxidized few-layered GaSe by Raman spectra, which is indexed as the Raman vibration mode of $\alpha$-Se.
Duhalde S, Vignolo M F, Golmar F, Chiliotte C, Torres C E R, Errico L A, Cabrera A F, Renteria M, Sanchez F H and Weissmann M 2005 Phys. Rev. B72 161313
Wu H, Zhou Y H, Yuan Y F, Chen C H, Zhou Y, Zhang B W, Chen X L, Gu C C, An C, Wang S Y, Qi M Y, Zhang R R, Zhang L L, Li X J and Yang Z R 2019 Chin. Phys. Lett.36 107101
2020, Vol. 37 
