1National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China 2York-Nanjing Joint Center (YNJC) for Spintronics and Nano-engineering, University of York, York YO105DD, United Kingdom 3Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
Abstract：The ternary topological insulators Bi$_2$Se$_{3-x}$Te$_x$ have attracted a great deal of attention due to their exotic physical and chemical properties. While most of the studies focus on the properties of these ternary TIs, limited research was performed to investigate the dynamic atomic stack of its crystal structure. We prepared high-quality Bi$_2$Se$_{3-x}$Te$_x$ thin films on GaAs(111)B substrates using molecular beam epitaxy, characterized with Raman spectroscopy, x-ray diffraction and photoelectron spectroscopy. It is found that when Se is replaced by Te, the preferred substituting sites are the middle layer at $0 < x < 1$, and this is also valid for Se substituting Te at $2 < x < 3$. In the middle region, the substituting atoms prefer to go to the first and the fifth layer.
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2020, Vol. 37 
