Pressure-Induced Topological and Structural Phase Transitions in an Antiferromagnetic Topological Insulator
Cuiying Pei1†, Yunyouyou Xia1,2,3†, Jiazhen Wu4, Yi Zhao1, Lingling Gao1, Tianping Ying4, Bo Gao5, Nana Li5, Wenge Yang5, Dongzhou Zhang6, Huiyang Gou5, Yulin Chen1,7,8, Hideo Hosono4, Gang Li1,8**, Yanpeng Qi1**
1School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China 2Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China 3University of Chinese Academy of Sciences, Beijing 100049, China 4Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama 226-8503, Japan 5Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, China 6Hawai'i Institute of Geophysics and Planetology, School of Ocean and Earth Science and Technology, University of Hawai'i at Manoa, Honolulu, Hawaii 96822, USA 7Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU, UK 8ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 200031, China
Abstract：Recently, natural van der Waals heterostructures of (MnBi$_{2}$Te$_{4}$)$_{m}$(Bi$_{2}$Te$_{3}$)$_{n}$ have been theoretically predicted and experimentally shown to host tunable magnetic properties and topologically nontrivial surface states. We systematically investigate both the structural and electronic responses of MnBi$_{2}$Te$_{4}$ and MnBi$_{4}$Te$_{7}$ to external pressure. In addition to the suppression of antiferromagnetic order, MnBi$_{2}$Te$_{4}$ is found to undergo a metal–semiconductor–metal transition upon compression. The resistivity of MnBi$_{4}$Te$_{7}$ changes dramatically under high pressure and a non-monotonic evolution of $\rho (T)$ is observed. The nontrivial topology is proved to persist before the structural phase transition observed in the high-pressure regime. We find that the bulk and surface states respond differently to pressure, which is consistent with the non-monotonic change of the resistivity. Interestingly, a pressure-induced amorphous state is observed in MnBi$_{2}$Te$_{4}$, while two high-pressure phase transitions are revealed in MnBi$_{4}$Te$_{7}$. Our combined theoretical and experimental research establishes MnBi$_{2}$Te$_{4}$ and MnBi$_{4}$Te$_{7}$ as highly tunable magnetic topological insulators, in which phase transitions and new ground states emerge upon compression.
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2020, Vol. 37 
