Abstract：We demonstrate that the transport of hot carriers may result in the phenomenon where an oscillated output current appears at the waveforms in a high-power photoconductive semiconductor switch (PCSS) working at long pulse width when the laser disappears or the electric field changes. The variational laser and electric field will affect the scattering rates of hot carriers and crystal lattice in high-power PCSS, and the drift velocity of hot carriers and also the on-state resistance will be changed. The present result is important for reducing the on-state resistance and improving the output characteristics of high-power Si/GaAs PCSS.
(Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices))
引用本文:
. [J]. 中国物理快报, 2020, 37(4): 44203-.
Chong-Biao Luan, Hong-Tao Li. Influence of Hot-Carriers on the On-State Resistance in Si and GaAs Photoconductive Semiconductor Switches Working at Long Pulse Width. Chin. Phys. Lett., 2020, 37(4): 44203-.
Loubriel G M, O'Malley M W, Zutavern F J, McKenzie B B, Conley W R and Hjalmarson H P 1988 IEEE Conf. Record Eighteenth Power Modulator Symposium1988 312
2020, Vol. 37 
