Pressure-Induced Ionic-Electronic Transition in BiVO$_{4}$
Shu-Peng Lyu, Jia Wang, Guo-Zhao Zhang, Yu-Fei Wang, Min Wang, Cai-Long Liu, Chun-Xiao Gao, Yong-Hao Han**
State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012
Abstract ：Electrical transport properties of bismuth vanadate (BiVO$_{4}$) are studied under high pressures with electrochemical impedance spectroscopy. A pressure-induced ionic-electronic transition is found in BiVO$_{4}$. Below 3.0 GPa, BiVO$_{4}$ has ionic conduction behavior. The ionic resistance decreases under high pressures due to the increasing migration rate of O$^{2-}$ ions. Above 3.0 GPa the channels for ion migration are closed. Transport mechanism changes from the ionic to the electronic behavior. First-principles calculations show that bandgap width narrows under high pressures, causing the continuous decrease of electrical resistance of BiVO$_{4}$.
收稿日期: 2019-02-27
出版日期: 2019-06-20
:
72.90.+y
(Other topics in electronic transport in condensed matter)
61.50.Ks
(Crystallographic aspects of phase transformations; pressure effects)
66.10.Ed
(Ionic conduction)
引用本文:
. [J]. 中国物理快报, 2019, 36(7): 77202-.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/36/7/077202
或
https://cpl.iphy.ac.cn/CN/Y2019/V36/I7/77202
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2019, Vol. 36 
