| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Temperature-Dependent Photoluminescence Analysis of 1.0MeV Electron Irradiation-Induced Nonradiative Recombination Centers in n$^{+}$–p GaAs Middle Cell of GaInP/GaAs/Ge Triple-Junction Solar Cells |
| Jun-Ling Wang, Tian-Cheng Yi, Yong Zheng, Rui Wu, Rong Wang** |
Key Laboratory of Beam Technology and Materials Modification of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875
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| Cite this article: |
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Jun-Ling Wang, Tian-Cheng Yi, Yong Zheng et al 2017 Chin. Phys. Lett. 34 076106 |
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Abstract The effects of irradiation of 1.0 MeV electrons on the n$^{+}$–p GaAs middle cell of GaInP/GaAs/Ge triple-junction solar cells are investigated by temperature-dependent photoluminescence (PL) measurements in the 10–300 K temperature range. The appearance of thermal quenching of the PL intensity with increasing temperature confirms the presence of a nonradiative recombination center in the cell after the electron irradiation, and the thermal activation energy of the center is determined using the Arrhenius plot of the PL intensity. Furthermore, by comparing the thermal activation and the ionization energies of the defects, the nonradiative recombination center in the n$^{+}$–p GaAs middle cell acting as a primary defect is identified as the E5 electron trap located at $E_{\rm c}-0.96$ eV.
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Received: 02 March 2017
Published: 23 June 2017
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| Fund: Supported by the National Natural Science Foundation of China under Grant Nos 11675020, 11375028, 11075018 and 10675023. |
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