| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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An Increase in TDDB Lifetime of Partially Depleted SOI Devices Induced by Proton Irradiation |
| Teng Ma1,2,3, Qi-Wen Zheng1,2, Jiang-Wei Cui1,2, Hang Zhou1,2,3, Dan-Dan Su1,2,3, Xue-Feng Yu1,2**, Qi Guo1,2 |
1Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011
2Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011
3University of Chinese Academy of Sciences, Beijing 100049
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| Cite this article: |
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Teng Ma, Qi-Wen Zheng, Jiang-Wei Cui et al 2017 Chin. Phys. Lett. 34 076104 |
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Abstract The effects of proton irradiation on the subsequent time-dependent dielectric breakdown (TDDB) of partially depleted SOI devices are experimentally investigated. It is demonstrated that heavy-ion irradiation will induce the decrease of TDDB lifetime for many device types, but we are amazed to find a measurable increase in the TDDB lifetime and a slight decrease in the radiation-induced leakage current after proton irradiation at the nominal operating irradiation bias. We interpret these results and mechanisms in terms of the effects of radiation-induced traps on the stressing current during the reliability testing, which may be significant to expand the understanding of the radiation effects of the devices used in the proton radiation environment.
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Received: 02 May 2017
Published: 23 June 2017
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| PACS: |
61.80.Jh
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(Ion radiation effects)
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77.22.Jp
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(Dielectric breakdown and space-charge effects)
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85.30.Tv
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(Field effect devices)
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| Fund: Supported by the National Natural Science Foundation of China under Grant Nos 11475255 and 11505282, and the West Light Foundation of Chinese Academy of Sciences under Grant No 2015-XBQN-B-15. |
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| [1] | Silvestri M, Gerardin S, Schrimpf R D, Fleetwood D M, Faccio F and Paccagnella A 2009 IEEE Trans. Nucl. Sci. 56 3244 | | [2] | Liu X N, Dai L H, Ning B X and Zou S C 2017 Chin. Phys. Lett. 34 016103 | | [3] | Huang J Q, He W W, Chen J, Luo J X, Lu K and Chai Z 2016 Chin. Phys. Lett. 33 096101 | | [4] | Cester A, Cimino S, Paccagnella A and Ghibaudo G 2003 IEEE Trans. Nucl. Sci. 50 729 | | [5] | Choi B K, Fleetwood D M, Schrimpf R D and Massengill L W 2002 IEEE Trans. Nucl. Sci. 49 3045 | | [6] | Suehle J S, Vogel E M, Roitman P, Conley J F, Johnston A H, Wang B, Bernstein J B and Weintraub C E 2002 Appl. Phys. Lett. 80 1282 | | [7] | Simoen E, Rafıí J M, Mercha A and Claeys C 2004 Solid-State Electron. 48 1045 | | [8] | Hayama K, Takakura K, Yoneoka M, Ohyama H, Rafi G M, Mercha A, Simoen E and Claeys C 2007 Microelectron. Eng. 84 2125 | | [9] | Paccagnell A, Candelori A, Milani A and Formigoni E 1996 IEEE Trans. Nucl. Sci. 43 2609 | | [10] | Silvestri M, Gerardin S, Paccagnella A and Ghidini G 2009 IEEE Trans. Nucl. Sci. 56 1964 | | [11] | Lu M, Huang J W and Xu J 2016 Chin. Phys. B 25 098402 | | [12] | Groeseneken G, Degraeve R, Nigam T, Van d B G and Maes H E 1999 Microelectron. Eng. 49 27 | | [13] | Denais M, Huard V, Parthasarathy C, Ribes G, Perrier F and Revil N 2005 IEEE Trans. Device Mater. Reliab. 4 715 | | [14] | Ceschia M, Paccagnella A, Cester A and Scarpa A 1998 IEEE Trans. Nucl. Sci. 45 2375 | | [15] | Martin A, O'Sullivan P and Mathewson A 1996 Microelectron. J. 27 633 | | [16] | Takayanagi M, Takagi S and Toyoshima Y 2001 VLSl Technol. Symp. p 99 | | [17] | Zhang W D, Zhang J F, Lalor M and Burton D 2002 IEEE Trans. Electron Devices 49 1868 |
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