| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Recrystallization Phase in He-Implanted 6H-SiC |
| Yu-Zhu Liu1, Bing-Sheng Li2**, Hua Lin1, Li Zhang3 |
1Jiangsu Collaborative Innovation Center on Atmospheric Environment and Equipment Technology, Nanjing University of Information Science & Technology, Nanjing 210044
2Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000
3Department of Physics, School of Science, Lanzhou University of Technology, Lanzhou 730050
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| Cite this article: |
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Yu-Zhu Liu, Bing-Sheng Li, Hua Lin et al 2017 Chin. Phys. Lett. 34 076101 |
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Abstract The evolution of the recrystallization phase in amorphous 6H-SiC formed by He implantation followed by thermal annealing is investigated. Microstructures of recrystallized layers in 15 keV He$^{+}$ ion implanted 6H-SiC (0001) wafers are characterized by means of cross-sectional transmission electron microscopy (XTEM) and high-resolution TEM. Epitaxial recrystallization of buried amorphous layers is observed at an annealing temperature of 900$^{\circ}\!$C. The recrystallization region contains a 3C-SiC structure and a 6H-SiC structure with different crystalline orientations. A high density of lattice defects is observed at the interface of different phases and in the periphery of He bubbles. With increasing annealing to 1000$^{\circ}\!$C, 3C-SiC and columnar epitaxial growth 6H-SiC become unstable, instead of [0001] orientated 6H-SiC. In addition, the density of lattice defects increases slightly with increasing annealing. The possible mechanisms for explanation are also discussed.
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Received: 01 April 2017
Published: 23 June 2017
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| Fund: Supported by the National Natural Science Foundation of China under Grant No 11475229, and the College Students Practice Innovative Training Program of Nanjing University of Information Science & Technology under Grant No 201610300042. |
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