| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
|
|
|
|
Enhanced Luminescence of InGaN-Based 395nm Flip-Chip Near-Ultraviolet Light-Emitting Diodes with Al as N-Electrode |
| Jin Xu, Wei Zhang, Meng Peng, Jiang-Nan Dai**, Chang-Qing Chen |
Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074
|
|
| Cite this article: |
|
Jin Xu, Wei Zhang, Meng Peng et al 2017 Chin. Phys. Lett. 34 074210 |
|
|
|
|
Abstract High-reflectivity Al-based n-electrode is used to enhance the luminescence properties of InGaN-based 395 nm flip-chip near-ultraviolet (UV) light-emitting diodes. The Al-only metal layer could form the Ohmic contact on the plasma etched n-GaN by means of chemical pre-treatment, with the lowest specific contact resistance of $2.211\times10^{-5}$ $\Omega\cdot$cm$^{2}$. The Al n-electrodes enhance light output power of the 395 nm flip-chip near-UV light-emitting diodes by more than 33% compared with the Ti/Al n-electrodes. Meanwhile, the electrical characteristics of these chips with two types of n-electrodes do not show any significant discrepancy. The near-field light distribution measurement of packaged chips confirms that the enhanced luminescence is ascribed to the high reflectivity of the Al electrodes in the UV region. After the accelerated aging test for over 1000 h, the luminous degradation of the packaged chips with Al n-electrodes is less than 3%, which proves the reliability of these chips with the Al-based electrodes. Our approach shows a simplified design and fabrication of high-reflectivity n-electrode for flip-chip near-UV light emitting diodes.
|
|
|
Received: 03 March 2017
Published: 23 June 2017
|
|
|
|
|
| Fund: Supported by the National Key Research and Development Program of China under Grant Nos 2016YFB0400901 and 2016YFB0400804, the Key Laboratory of Infrared Imaging Materials and Detectors of Shanghai Institute of Technical Physics of Chinese Academy of Sciences under Grant No IIMDKFJJ-15-07, the National Natural Science Foundation of China under Grant Nos 61675079, 11574166 and 61377034, and the China Postdoctoral Foundation under Grant No 2016M602287. |
|
|
|
| [1] | Yi L H, He X P, Zhou L Y, Gong F Z, Wang R F and Sun J H 2010 J. Lumin. 130 1113 | | [2] | Kuo C H, Sheu J K, Chang S J, Su Y K, Wu L W, Tsai J M, Liu C H and Wu R K 2003 Jpn. J. Appl. Phys. 42 2284 | | [3] | Sheu J K, Chang S J, Kuo C H, Su Y K, Wu L W, Lin Y C, Lai W C, Tsai J M, Chi G C and Wu R K 2003 IEEE Photon. Technol. Lett. 15 18 | | [4] | Zhang X G, Zhang J L, Huang J Q, Tang X P and Gong M L 2010 J. Lumin. 130 554 | | [5] | Shchekin O B, Epler J E, Trottier T A, Margalith T, Steigerwald D A, Holcomb M O, Martin P S and Krames M R 2006 Appl. Phys. Lett. 89 071109 | | [6] | Baik K H, Min B K, Kim J Y, Kim H K, Sone C, Park Y and Kim H 2010 J. Appl. Phys. 108 063105 | | [7] | Tu S H, Lan C J, Wang S H, Lee M L, Chang K H, Lin R M, Chang J Y and Sheu J K 2010 Appl. Phys. Lett. 96 133504 | | [8] | Mohammad S N 2004 J. Appl. Phys. 95 7940 | | [9] | Hu C Y, Ding Z B, Qin Z X, Chen Z Z, Wang Y J, Yang Z J, Hu X D, Yu T J, Yu L S, Yao S D and Zhang G Y 2006 Semicond. Sci. Technol. 21 938 | | [10] | Hu W D, Chen X S, Quan Z J, Xia C S, Lu W and Ye P D 2006 J. Appl. Phys. 100 074501 | | [11] | Jiang R, Lu H, Chen D J, Ren F F, Yan D W, Zhang R and Zheng Y D 2013 Chin. Phys. B 22 047805 | | [12] | Foresi J S and Moustakas T D 1993 Appl. Phys. Lett. 62 2859 | | [13] | Smith L L, Davis R F, Kim M J, Carpenter R W and Huang Y 1996 J. Mater. Res. 11 2257 | | [14] | Luther B P, Mohney S E, Jackson T N, Asif M, Chen Q and Yang J W 1997 Appl. Phys. Lett. 70 57 | | [15] | Motayed A, Jah M, Sharma A, Anderson W T, Litton C W and Mohammad S N 2004 J. Vac. Sci. Technol. B 22 663 |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
