| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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Intracavity Spontaneous Parametric Down-Conversion in Bragg Reflection Waveguide Edge Emitting Diode |
| Si-Hang Wei1,2,3, Xiang-Jun Shang1,2,3, Ben Ma1,2,3, Ze-Sheng Chen1,2,3, Yong-Ping Liao1,2,3, Hai-Qiao Ni1,2,3**, Zhi-Chuan Niu1,2,3 |
1State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408
3Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026
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| Cite this article: |
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Si-Hang Wei, Xiang-Jun Shang, Ben Ma et al 2017 Chin. Phys. Lett. 34 074202 |
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Abstract A four-wavelength Bragg reflection waveguide edge emitting diode based on intracavity spontaneous parametric down-conversion and four-wave mixing (FWM) processes is made. The structure and its tuning characteristic are designed by the aid of FDTD mode solution. The laser structure is grown by molecular beam epitaxy and processed to laser diode through the semiconductor manufacturing technology. Fourier transform infrared spectroscopy is applied to record wavelength information. Pump around 1.071 μm, signal around 1.77 μm, idler around 2.71 μm and FWM signal around 1.35 μm are observed at an injection current of 560 mA. The influences of temperature, carrier density and pump wavelength on tuning characteristic are shown numerically and experimentally.
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Received: 22 January 2017
Published: 23 June 2017
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| PACS: |
42.55.Px
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(Semiconductor lasers; laser diodes)
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42.60.By
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(Design of specific laser systems)
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42.65.Lm
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(Parametric down conversion and production of entangled photons)
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78.55.Cr
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(III-V semiconductors)
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| Fund: Supported by the National Key Basic Research Program of China under Grant Nos 2013CB933304 and 2014CB643904, the National Natural Science Foundation of China under Grant Nos 61435012 and 61274125, and the Strategic Priority Research Program (B) of Chinese Academy of Sciences under Grant No XDB01010200. |
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