| ATOMIC AND MOLECULAR PHYSICS |
|
|
|
|
Diffusion and Interface Reaction of Cu/Si (100) Films Prepared by Cluster Beam Deposition |
| GAO Xing-Xin1, JIA Yan-Hui1, LI Gong-Ping1**, CHO Seong-Jin2, KIM Hee2
|
1School of Nuclear Science and Technology, Lanzhou University, Lanzhou 730000
2Department of physics, Kyungsung University, Pusan 608-736, South Korea
|
|
| Cite this article: |
|
GAO Xing-Xin, JIA Yan-Hui, LI Gong-Ping et al 2011 Chin. Phys. Lett. 28 033601 |
|
|
|
|
Abstract Cu thin films are deposited on Si (100) substrates by neutral cluster beams and ionized cluster beams. The atomic diffusion and interface reaction between the Cu films and the Si substrates of as-deposited and annealed at different temperatures (230°C, 450°C, 500°C and 600°C) are investigated by Rutherford backscattering spectrometry (RBS) and x-ray diffraction (XRD). Some significant results are obtained on the following aspects: (1) For the Cu/Si(100) samples prepared by neutral cluster beams and ionized cluster beams at Va=0 kV, atomic diffusion phenomena are observed clearly in the as-deposited samples. With the increase of annealing temperature, the interdiffusion becomes more apparent. However, the diffusion intensities of the RBS spectra of the Cu/Si(100) films using neutral cluster beams are always higher than that of the Cu/Si(100) films using ionized cluster beams at Va=0 kV in the as-deposited and samples annealed at the same temperature. The compound of Cu3Si is observed in the as-deposited samples. (2) For the Cu/Si(100) samples prepared by ionized cluster beams at Va=1, 3, 5 kV, atomic diffusion phenomena are observed in the as-deposited samples at Va=1, 5 kV. For the samples prepared at Va=3 kV, the interdiffusion phenomenon is observed until 500°C annealing temperature. The reason for the difference is discussed.
|
| Keywords:
36.40.-c
68.35.Fx
61.72.Ww
|
|
|
Received: 16 August 2010
Published: 28 February 2011
|
|
|
|
|
|
|
|
[1] Saranin A A et al 2009 Surf. Sci. 603 2874
[2] Ferretti N, Balkaya B, Vollmer A et al 2007 J. Electron. Spectrosc. Relat. Phenom. 156–158 124
[3] De Santis M et al 2001 Surf. Sci. 477 179
[4] Stolt L et al 1991 Thin Solid Films 200 147
[5] Hong S Q et al 1991 J. Appl. Phys. 70 3655
[6] Echigoya J et al 1992 Appl. Surf. Sci. 56–58 463
[7] Sosnowski M and Yamada I 1989 Nucl. Instrum. Methods B 37/38 874
[8] Yamada I 1989 Appl. Surf. Sci. 43 23
[9] Takaoka G H, Fujita K, Ishikawa J and Takagi T 1989 Nucl. Instrum. Methods B 37/38 882
[10] Stolt L and D'Heurle F M 1990 Thin Solid Films 189 269
[11] Gao X X et al 2008 Nucl. Instrum. Methods B 266 2572
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
