| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Structural and Photoluminescence Properties for Highly Strain-Compensated InGaAs/InAlAs Superlattice |
GU Yi1,2, ZHANG Yong-Gang1, LI Ai-Zhen1, WANG Kai1,2, LI Cheng1,2, LI
Yao-Yao1 |
| 1State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 2000502Graduate School of the Chinese Academy of Sciences, Beijing 100049 |
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| Cite this article: |
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GU Yi, ZHANG Yong-Gang, LI Ai-Zhen et al 2009 Chin. Phys. Lett. 26 077808 |
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Abstract The effects of strain compensation are investigated by using twenty periods of highly strain-compensated InGaAs/InAlAs superlattice. The lattice mismatches of individual layers are as high as about 1%, and the thicknesses are close to critical thicknesses. X-ray diffraction measurements show that lattice imperfectness is not serious but still present, though the structural parameters are within the range of theoretical design criteria for structural stability. Rough interfaces and composition fluctuations are the primary causes for lattice imperfectness. Photoluminescence measurements show the large thermally activated nonradiative recombination in the sample. In addition, the recombination process gradually evolves from excitonic recombination at lower temperatures to band-to-band recombination at higher temperatures, which should be considered in device applications.
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| Keywords:
78.67.Pt
81.15.Hi
78.55.Cr
61.05.Cp
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Received: 01 January 2009
Published: 02 July 2009
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| PACS: |
78.67.Pt
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(Multilayers; superlattices; photonic structures; metamaterials)
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81.15.Hi
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(Molecular, atomic, ion, and chemical beam epitaxy)
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78.55.Cr
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(III-V semiconductors)
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61.05.cp
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(X-ray diffraction)
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