Point group | Layer group | Material |
---|---|---|

${{D}_{3h}}$ | $p\bar{6}m2$, $p\bar{6}2m$ | MoS$_2$, MoSe$_2$, WS$_2$, WSe$_2$ |

NbS$_2$, NbSe$_2$, TaS$_2$, TaSe$_2$, | ||

ReSe$_2$, GaS, GaSe, InSe, | ||

ZrSe, monolayer Na$_3$Bi, |
||

In$_2$Se$_3$, MoSi$_2$N$_4$ |
||

${{D}_{3}}$ (32) | $p312$, $p321$ | Ag$_2$Br$_6$, Bi$_2$I$_6$, Nb$_2$I$_6$, |

AgIn$_2$PSe$_6$ | ||

${{C}_{3v}}$($3m$) | $p31m$, $p3m1$ | MoSSe, |

TaSeTe, buckled GaAs (insulator), |
||

Oxygen functionalized MXene, |
||

Bismuthene on a SiC substrate |
||

$C_{3h}$ | $p\bar{6}$ | |

$C_3(3)$ | $p3$ | Ir$_2$B$_6$, Cu$_2$Cl$_6$, ScP$_2$Se$_6$, |

BiCuP$_2$Se$_6$, AgBiP$_2$Se$_6$ | ||

${{C}_{2v}}$($2mm$) | $pm2m$, $pm2_1b$, | Monolayer SnTe, |

$pb2_1m$, $pb2b$, | ||

$pm2a$, $pm2_1n$, | ||

$pb2_1a$, $pb2n$, | ||

$cm2m$, $cm2e$ | ||

${{C}_{1v}}$($m$) | $pm11$, $pb11$, $cm11$ | Bilayer WTe$_2$, |

Monolayer WTe$_2$ under electric | ||

field, |
||

$C_2(2)$ | $p211$, $p2_111$, $c211$ | ZrTeSe$_4$, ZrTeTe$_4$ |

$C_{1h}(m)$ | $p11m$, $p11a$ | Zr$_4$I$_4$S$_4$, Mo$_3$WSe$_8$, |

CrMo$_3$S$_8$ | ||

$C_1$ | $p1$ | AgNO$_2$, Zr$_2$BSe$_2$, Pt$_2$Se$_6$, |

Bi$_2$P$_2$S$_6$, In$_2$Te$_4$ |

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