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Quantum Anomalous Hall Multilayers Grown by Molecular Beam Epitaxy

  • 1State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084

  • 2Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190

Funds: Supported by the National Key Research and Development Program of China under Grant No 2017YFA0303303, the National Natural Science Foundation of China under Grant No 51661135024, and the Beijing Advanced Innovation Center for Future Chip (ICFC).
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  • Received Date: June 07, 2018
  • Published Date: June 30, 2018
    Abstract
  • Quantum anomalous Hall (QAH) effect is a quantum Hall effect that occurs without the need of external magnetic field. A system composed of multiple parallel QAH layers is an effective high Chern number QAH insulator and the key to the applications of the dissipationless chiral edge channels in low energy consumption electronics. Such a QAH multilayer can also be engineered into other exotic topological phases such as a magnetic Weyl semimetal with only one pair of Weyl points. This work reports the first experimental realization of QAH multilayers in the superlattices composed of magnetically doped (Bi,Sb)2Te3 topological insulator and CdSe normal insulator layers grown by molecular beam epitaxy. The obtained multilayer samples show quantized Hall resistance h/Ne2, where h is Planck's constant, e is the elementary charge and N is the number of the magnetic topological insulator layers, resembling a high Chern number QAH insulator. The QAH multilayers provide an excellent platform to study various topological states of matter.
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