| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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Optical Properties of Atomic Defects in Hexagonal Boron Nitride Flakes under High Pressure |
| Xiao-Yu Zhao1,2, Jun-Hui Huang1,2, Zhi-Yao Zhuo1,2, Yong-Zhou Xue1, Kun Ding1, Xiu-Ming Dou1,2**, Jian Liu1,2, Bao-Quan Sun1,2 |
1State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049
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| Cite this article: |
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Xiao-Yu Zhao, Jun-Hui Huang, Zhi-Yao Zhuo et al 2020 Chin. Phys. Lett. 37 044204 |
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Abstract We investigate the pressure spectral characteristics and the effective tuning of defect emissions in hexagonal boron nitride (hBN) at low temperatures using a diamond anvil cell (DAC). It is found that the redshift rate of emission energy is up to 10 meV/GPa, demonstrating a controllable tuning of single photon emitters through pressure. Based on the distribution character of pressure coefficients as a function of wavelength, different kinds of atomic defect states should be responsible for the observed defect emissions.
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Received: 27 November 2019
Published: 24 March 2020
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| PACS: |
42.50.Dv
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(Quantum state engineering and measurements)
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61.72.-y
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(Defects and impurities in crystals; microstructure)
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62.50.-p
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(High-pressure effects in solids and liquids)
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78.67.-n
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(Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures)
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| Fund: Supported by the Postdoctoral Science Foundation of China under Grant No. Y8T0111001. |
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