| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Total Ionizing Dose Radiation Effects in the P-Type Polycrystalline Silicon Thin Film Transistors |
| Yuan Liu1,2**, Kai Liu1,2, Rong-Sheng Chen2, Yu-Rong Liu2, Yun-Fei En1, Bin Li2, Wen-Xiao Fang1** |
1Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic Produce Reliability and Environmental Testing Research Institute, Guangzhou 510610
2School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510641
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| Cite this article: |
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Yuan Liu, Kai Liu, Rong-Sheng Chen et al 2017 Chin. Phys. Lett. 34 018501 |
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Abstract The total ionizing dose radiation effects in the polycrystalline silicon thin film transistors are studied. Transfer characteristics, high-frequency capacitance-voltage curves and low-frequency noises (LFN) are measured before and after radiation. The experimental results show that threshold voltage and hole-field-effect mobility decrease, while sub-threshold swing and low-frequency noise increase with the increase of the total dose. The contributions of radiation induced interface states and oxide trapped charges to the shift of threshold voltage are also estimated. Furthermore, spatial distributions of oxide trapped charges before and after radiation are extracted based on the LFN measurements.
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Received: 22 June 2016
Published: 29 December 2016
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| PACS: |
85.30.Tv
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(Field effect devices)
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61.80.Ed
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(γ-ray effects)
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73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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85.40.Qx
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(Microcircuit quality, noise, performance, and failure analysis)
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| Fund: Supported by the National Natural Science Foundation of China under Grant Nos 61574048 and 61204112, the Science and Technology Research Project of Guangdong Province under Grant Nos 2015B090912002 and 2014A030313656, and the Pearl River S$\&$T Nova Program of Guangzhou. |
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