Chin. Phys. Lett.  2009, Vol. 26 Issue (11): 117502    DOI: 10.1088/0256-307X/26/11/117502
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Grain Size Effect on Electrical Conductivity and Giant Magnetoresistance of Bulk Magnetic Polycrystals
LUO Wei, ZHU Lin-Li, ZHENG Xiao-Jing
Key Laboratory of Mechanics on Western Disaster and Environment (Ministry of Education) and Department of Mechanics and Engineering Science, College of Civil Engineering and Mechanics, Lanzhou University, Lanzhou 730000
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LUO Wei, ZHU Lin-Li, ZHENG Xiao-Jing 2009 Chin. Phys. Lett. 26 117502
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Abstract By solving the Boltzmann transport equation and considering the spin-dependent grain boundary scattering, the distribution of electrons in grains and the electrical transport properties in the applied magnetic field are studied. With regard to the dominant influence of grain boundary scattering which is taken as a boundary condition for the electrical transport, the grain size-dependent electrical conductivity is investigated. In addition, the reorientation of the relative magnetization between grains brings the change of the electron spin when the magnetonanocrystalline material is subjected to the magnetic field, resulting in the remarkable giant magnetoresistance effect.
Keywords: 75.47.De      73.43.Qt      72.20.-i     
Received: 15 July 2009      Published: 30 October 2009
PACS:  75.47.De (Giant magnetoresistance)  
  73.43.Qt (Magnetoresistance)  
  72.20.-i (Conductivity phenomena in semiconductors and insulators)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/26/11/117502       OR      https://cpl.iphy.ac.cn/Y2009/V26/I11/117502
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LUO Wei
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[1] Fuchs K 1938 Proc. Camb. Phil. Soc. 34 100
[2]Sondheimer E H 1952 Adv. Phys. 1 1
[3]Mayadas A F, Shatzkes M 1970 Phys. Rev. B 11382
[4]Wu W et al 2004 Appl. Phys. Lett. 84 2838
[5]K\"{astle G et al 2004 Phys. Rev. B 70 165414
[6]Meyerovich A E and Ponnmarev I V 2002 Phys. Rev. B 65 155413
[7]Meyerovich A E and Ponnmarev I V 2003 Phys. Rev. B 67 026302
[8]Disalvo F J 1999 Science 285 703
[9]Zhai P C et al 2006 Appl. Phys. lett. 89 052111
[10]Mi J L, Zhu T J, Zhao X B and Tu J P 2007 J. Appl.Phys. 101 054314
[11]Bietsch A and Michel B 2002 Appl. Phys. Lett. 80 3346
[12]Landauer R 1957 IBM J. Res. Dev. 1 223
[13]Vancea J, Reiss G and Hoffmann H 1987 Phys. Rev. B 35 6435
[14] Gordeev S N et al 2001 Phys. Rev. Lett. 87186808
[15] Lebon A et al 2004 Phys. Rev. Lett. 92 037202
[16]Wu J et al 2005 Phys. Rev. Lett. 94 037201
[17]Yu S Y et al 2006 Appl. Phys. Lett. 89 162503
[18] Koyama K et al 2006 Appl. Phys. Lett. 89182510
[19]Miao J H et al 2007 J. Appl. Phys. 101 043904
[20]Sengupta K, Iyer K K and Sampathrumaran E V 2005 Phys. Rev. B 72 054422
[21]Hood R Q, Falicov L M and Penn D R 1994 Phys. Rev. B 49 368
[22]Camley R E and Barna\'s J 1989 Phys. Rev. Lett. 63 664
[23]Levy P M, Zhang S and Fert A 1990 Phys. Rev. Lett. 65 1643
[24]Zhang S, Levy P M and Fert A 1992 Phys. Rev. B 45 8689
[25]Chen P et al 2001 Phys. Rev. Lett. 87 107202
[26]Zhang Y Q, Zhang Z D and Aarts J 2004 Phys. Rev. B 70 132407
[27]O'Handley R C 2000 Modern Magnetic Materials Principlesand Applications (New York: John Wiley {\& Sons, Ioc.)
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