| Original Articles |
|
|
|
|
Simulation of Phase-Change Random Access Memory with Ring-Type Contactor for Low Reset Current by Finite Element Modelling |
| GONG Yue-Feng1,2, LING Yun1, SONG Zhi-Tang1, FENG Song-Lin1 |
| 1The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystems and Information Technology, Chinese Academy of Sciences, Shanghai 2000502Graduate School of the Chinese Academic of Sciences, Beijing 100049 |
|
| Cite this article: |
|
GONG Yue-Feng, LING Yun, SONG Zhi-Tang et al 2008 Chin. Phys. Lett. 25 3455-3458 |
|
|
|
|
Abstract A three-dimensional finite element models for phase change random access memory (PCRAM) is established to simulate thermal and electrical behaviours during RESET operation. The RESET behaviours of the conventional structure (CS) and the ring-type contact in bottom electrode (RIB) are compared with each other. The simulation results indicate that the RIB cell has advantages of high heat efficiency for melting phase change material in cell, reduction of contact area and lower RESET current with maintaining good resistance contrast. The RESET current decreases from 1.26mA to 1.2mA and the heat consumption in GST material during programming increases from 12% to 37% in RIB structure. Thus the RIB structure PCRAM cell is suitable for future device with high heat efficiency and smaller RESET current
|
| Keywords:
81.05.Gc
83.10.Tv
44.10.+i
|
|
|
Received: 27 May 2008
Published: 29 August 2008
|
|
|
|
|
|
|
|
[1] Mainon J 2003 , IEEE Proc. Aerospace Conference(Big Sky, MT, 10--17 March 2001) p 2289
[2] Yi J H et al 2003 IEEE Int. Electron DevicesMeeting (Washington, DC, 8--10 December 2003) p 901
[3] Lai S and Lowrey T 2001 IEEE Int. Electron DevicesMeeting (Washington, DC, 2--5 December 2001) p 803
[4] Lai S 8--10 December 2003 IEEE Int. ElectronDevices Meeting (Washington, DC, 8--10 December 2003) p 255
[5] Song Y J et al 2005 Proc. European Solid StateDevice Research Conference (Grenoble, France, 12--16 September2005 ) p 513
[6] Kim S S, Jeong S M, Lee K H, Park Y K, Kim Y T, Kong J Tand Lee H L 2005 Jpn. J. Appl. Phys. 44 5943
[7] Kim D H et al 2007 J. Appl. Phys. 101 064512
[8] Wright C D, Armand M, Aziz M M, Senkader S and Yu W 2004 Mat. Res. Soc. Symp. Proc. 803 HH 1.2.1
[9] Yin Y, Sone H and Hosaka S 2006 Jpn. J. Appl. Phys. 45 6177
[10] Gidon S, Lemonnier O, Rolland B et al. 2004 J. Appl.Phys. 85 6392
[11] Hyot B, Poupinet L, and Desr\'{e P 2004 Mater. Res.Soc. Symp. Proc. 803 149
[12] Yeung F et al 2005 Jpn. J. Appl. Phys. 442691
[13] Gill M, Lowrey T and Park J 2002 Dig. Tech. Pap.Int. Solid-State Circuits Conf. 202
[14] Kang D H, Ahn D H, Kim K B, Webb J F and Yi K W 2003 J. Appl. Phys. 94 3536
[15] Kim Y T, Hwang Y N, Lee K H, Lee S H, Jeong C W, Ahn S J,Yeung F, Koh G H, Heong H S, Chung W Y, Kim T K, Park Y K, Kim K Nand Kong J T 2005 Jpn. J. Appl. Phys. 44 2701
[16] Kang D H, Kim L H, Jeong J, Cheong B, Ahn D H, Lee D, KimH M, Kim K B and Kim S Y 2006 J. Appl. Phys. 100 54506
[17] Morales-S\'{anchez E et al 2005 Thin Solid Films 471 243
[18] Zhang Y, Feng J, Wang H, Cai B and Chen B 2005 Jpn.J. Appl. Phys. 44 1687
[19] Peng C, Cheng L and Mansuripur M 1997 J. Appl.Phys. 82 4183 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
