| Original Articles |
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Mechanism of NBTI Recovery under Negative Voltage Stress |
| CAO Yan-Rong, HU Shi-Gang, MA Xiao-Hua, HAO Yue |
| 1School of Microelectronics, Xidian University, Xi'an 7100712Key Lab of Wide Band-Gap Semiconductor Materials and Devices, Xi'an710071 |
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| Cite this article: |
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CAO Yan-Rong, HU Shi-Gang, MA Xiao-Hua et al 2008 Chin. Phys. Lett. 25 3393-3396 |
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Abstract Recovery phenomenon is observed under negative gate voltage stress which is smaller than the previous degradation stress. We focus on the drain current to study the degradation and recovery of negative bias temperature instability (NBTI) with a real-time method. By this method, different recovery phenomena among different size devices are observed. Under negative recovery stress, the drain current gradually recovers for the large size devices and gets into recovery saturation when long recovery time is involved. For small-size devices, a step-like recovery of drain current is observed. The recovery of the drain current is mainly caused by the holes detrapping and tunnelling back to the channel surface which are trapped in oxide. The model of hole detrapping explains the recovery under negative voltage stress reasonably.
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| Keywords:
73.40.Qv
85.30.Tv
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Received: 23 July 2008
Published: 29 August 2008
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| PACS: |
73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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85.30.Tv
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(Field effect devices)
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