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Influence of Width of Left Well on Intersubband Transitions in AlxGa1-x N/GaN Double Quantum Wells |
| LEI Shuang-Ying1, SHEN Bo2, ZHANG Guo-Yi2 |
| 1Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 2100962State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 |
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| Cite this article: |
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LEI Shuang-Ying, SHEN Bo, ZHANG Guo-Yi 2008 Chin. Phys. Lett. 25 3385-3388 |
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Abstract Influence of width of left well in AlxGa1-xN/GaN double quantum wells (DQWs) on absorption coefficients and wavelengths of the intersubband transitions (ISBTs) is investigated by solving the Schrödinger and Poisson equations self-consistently. When the width of left well is 1.79nm, three-energy-level DQWs are realized. The ISBT between the first odd and second odd order subbands (the 1odd-2odd ISBT) has a comparable absorption coefficient with the 1 odd-2even ISBT. Their wavelengths are located at 1.3 and 1.55μm, respectively. When the width of left well is 1.48nm, a four-energy-level DQWs is realized. The calculated results have a possible application to ultrafast two-colour optoelectronic devices operating within the optical communication wavelength range
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| Keywords:
73.21.Fg
72.80.Ey
03.65.Ge
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Received: 18 June 2008
Published: 29 August 2008
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| PACS: |
73.21.Fg
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(Quantum wells)
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72.80.Ey
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(III-V and II-VI semiconductors)
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03.65.Ge
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(Solutions of wave equations: bound states)
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