| Original Articles |
|
|
|
|
High Current Multi-finger InGaAs/InP Double Heterojunction Bipolar Transistor with the Maximum Oscillation Frequency 253GHz |
| JIN Zhi1, SU Yong-Bo1, CHENG Wei1, LIU Xin-Yu1, XU An-Huai2, QI Ming2 |
| 1Institute of Microelectronics, Chinese Academy of Sciences, Beijing 1000292State Key Lab of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 |
|
| Cite this article: |
|
JIN Zhi, SU Yong-Bo, CHENG Wei et al 2008 Chin. Phys. Lett. 25 3075-3078 |
|
|
|
|
Abstract A four-finger InGaAs/InP double heterojunction bipolar transistor is designed and fabricated successfully by using planarization technology. The emitter area of each finger is 1×15μm2. The breakdown voltage is more than 7V, the maximum collector current could be more than 100mA. The current gain cutoff frequency is as high as 155GHz and the maximum oscillation frequency reaches 253GHz. The heterostructure bipolar transistor can offer more than 70mW class-A maximum output power at W band and the maximum power density can be as high as 1.2W/mm.
|
| Keywords:
85.30.Pq
71.55.Eq
79.60.Jv
73.20.At
|
|
|
Received: 26 March 2008
Published: 25 July 2008
|
|
| PACS: |
85.30.Pq
|
(Bipolar transistors)
|
| |
71.55.Eq
|
(III-V semiconductors)
|
| |
79.60.Jv
|
(Interfaces; heterostructures; nanostructures)
|
| |
73.20.At
|
(Surface states, band structure, electron density of states)
|
|
|
|
|
|
[1] Paidi V K, Griffith Z, Wei Y, Dahlstrom M, Urteaga M,Parthasarathy N, Seo M, Samoska L, Fung A and Rodwell M J W 2005 IEEE Trans. Microwave Theor. Technol. 53 598
[2] Sawdai D, Chang P C, Gambin V, Zeng X, Wang J, Barsky M,Chan B, Oyama B, Gutierrez-Aitken A and Oki A 2005 International Conference on Indium Phosphide and RelatedMaterials (Glasgow, Scotland 8--12 May 2005) p 335
[3] Cripps S C 1999 RF Power Amplifiers for WirelessCommunications (Boston: Artech House)
[4] Wei Y 2003 PhD Thesis (University of California at Santa Barbara)
[5] Kirk C T Jr 1962 {it IRE Trans. Electron Devices 9164
[6] Jin Z, Su Y. Cheng W, Liu X Y, Xu A H and Qi M 2008 Chin. Phys. Lett. 25
[7] Jin Z, Prost W, Neumann S and Tegude F J 2004 Appl.Phys. Lett. 84 2910
[8] Liu W 1998 Handbook of I$\!$I$\!$I--V HeterojunctionBipolar Transistors (New York: Wiley-Interscience)
[9] Harrison I, Dahlstrom M, Krishna S, Griffith Z, Kim Y Mand Rodwell M J W 2004 IEEE Tran. Electron. Devices 51529
[10] Jin Z and Liu X Y Sci. Chin. E 51 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
