| Original Articles |
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CHF3 Dual-Frequency Capacitively Coupled Plasma by Optical Emission Spectroscopy |
XU Yi-Jun, YE Chao, HUANG Xiao-Jiang, YUAN Jing, XING Zhen-Yu, NING
Zhao-Yuan |
| School of Physics Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006 |
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| Cite this article: |
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XU Yi-Jun, YE Chao, HUANG Xiao-Jiang et al 2008 Chin. Phys. Lett. 25 2942-2945 |
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Abstract We investigate the intermediate gas phase in the CHF3 13.56MHz/2MHz dual-frequency capacitively couple plasma (CCP) for the SiCOH low dielectric constant (low-k) film etching, and the effect of 2MHz power on radicals concentration. The major dissociation reactions of CHF3 in 13.56MHz CCP are the low dissociation bond energy reactions, which lead to the low F and high CF2 concentrations. The addition of 2MHz power can raise the probability of high dissociation bond energy reactions and lead to the increase of F concentration while keeping the CF2 concentration almost a constant, which is of advantage to the SiCOH low-k films etching. The radical spatial uniformity is dependent on the power coupling of two sources. The increase of 2MHz power leads to a poor uniformity, however, the uniformity can be improved by increasing 13.56MHz power.
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| Keywords:
52.80.Pj
82.33.Xj
52.77.Bn
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Received: 22 April 2008
Published: 25 July 2008
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| PACS: |
52.80.Pj
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82.33.Xj
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(Plasma reactions (including flowing afterglow and electric discharges))
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52.77.Bn
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(Etching and cleaning)
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