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Modelling and Analysis of Modal Behaviour in SOI Slot Waveguides |
| LIU Yan, XU Xue-Jun, CHEN Shao-Wu, YU Jin-Zhong |
| State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
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| Cite this article: |
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LIU Yan, XU Xue-Jun, CHEN Shao-Wu et al 2008 Chin. Phys. Lett. 25 2918-2921 |
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Abstract Mode behaviour for SOI slot waveguides is modelled and analysed using a numerical full vectorial method based on the film mode matching method (MMM). Only the quasi-TE mode is investigated. Waveguide heights and slot widths, as well as silicon widths are properly chosen with respect to the single mode behaviour in the slot region. Comparison between the effective index method and our side loss method shows that our single mode condition is creditable. The optical power confinement in slot region for the quasi-TE mode is also studied and presented. We demonstrate that the maximum achievable optical power confinement Pslot and the maximum normalized average optical intensity Islot are 42% and 26μm-2, respectively.
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| Keywords:
42.82.Ds
42.82.Et
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Received: 17 February 2008
Published: 25 July 2008
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| PACS: |
42.82.Ds
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(Interconnects, including holographic interconnects)
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42.82.Et
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(Waveguides, couplers, and arrays)
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