| Original Articles |
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Preparation and Characterization of BPO Film as Electrode for Using of FeRAM |
| WEN Xin-Yi, YU Jun, WANG Yun-Bo, ZHOU Wen-Li, GAO Jun-Xiong, CHU Xiao-Hui |
| Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074 |
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| Cite this article: |
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WEN Xin-Yi, YU Jun, WANG Yun-Bo et al 2008 Chin. Phys. Lett. 25 2694-2697 |
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Abstract Conductive perovskite BaPbO3 (BPO) films as a potential electrode material of PZT capacitors used in ferroelectric random access memory are prepared by rf magnetron sputtering. An x-ray diffractometer and standard four probe method are employed to investigate the dependence of growth conditions on crystal structure and conductivity of BPO films. It is found that BPO films with perovskite phase can be obtained at substrate temperatures above 425°C, and the sample with the lowest resistivity is obtained at 450°C under pure argon atmosphere. Using this BPO film as electrode, ferroelectric properties of BPO/PZT/BPO and Pt/PZT/BPO sandwiched structures are evaluated. Their remanent polarization and coercive field are 36.6μC/cm2 (81.3kV/cm) and 36.9μC/cm2 (89.1kV/cm), respectively. The coercive field of the former structure is lower than that of the latter, but remanent polarizations are almost the same. In addition, the results imply that BPO electrode is helpful to improve the fatigue resistance of PZT. The reasons are discussed.
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| Keywords:
85.50.-n
85.50.Gk
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Received: 11 March 2008
Published: 26 June 2008
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| PACS: |
85.50.-n
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(Dielectric, ferroelectric, and piezoelectric devices)
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85.50.Gk
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(Non-volatile ferroelectric memories)
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