| Original Articles |
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Surface Erosion of GaN Bombarded by Highly Charged 208Pbq+-Ions |
| ZHANG Li-Qing, ZHANG Chong-Hong, YANG Yi-Tao, YAO Cun-Feng, LI Bing-Sheng, JIN Yun-Fan, SUN You-Mei, SONG Shu-Jian |
| Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 |
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| Cite this article: |
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ZHANG Li-Qing, ZHANG Chong-Hong, YANG Yi-Tao et al 2008 Chin. Phys. Lett. 25 2670-2673 |
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Abstract Surface change of gallium nitride specimens after bombardment by highly charged Pbq+-ions (q=25, 35) at room temperature is studied by means of atomic force microscopy. The experimental results reveal that the surface of GaN specimens is significantly etched and erased. An unambiguous step-up is observed. The erosion depth not only strongly depends on the charge state of ions, but also is related to the incident angle of Pbq+-ions and the ion dose. The erosion depth of the specimens in 60°incidence (tilted incidence) is significantly deeper than that of the normal incidence. The erosion behaviour of specimens has little dependence on the kinetic energy of ion (Ek=360, 700keV). On the other hand, surface roughness of the irradiated area is obviously decreased due to erosion compared with the un-irradiated area. A flat terrace is formed.
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| Keywords:
81.65.Cf
61.80.Jh
61.72.Ff
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Received: 24 January 2008
Published: 26 June 2008
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| PACS: |
81.65.Cf
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(Surface cleaning, etching, patterning)
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61.80.Jh
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(Ion radiation effects)
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61.72.Ff
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(Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.))
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