Chin. Phys. Lett.  2008, Vol. 25 Issue (7): 2664-2666    DOI:
Original Articles |
Enhancement in Thermoelectrical Power Factor of N-Type Si80Ge20 Alloys
XU Ya-Dong, XU Gui-Ying, LIU Yan-Hong, GE Chang-Chun
Laboratory of Special Ceramics and Powder Metallurgy, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083
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XU Ya-Dong, XU Gui-Ying, LIU Yan-Hong et al  2008 Chin. Phys. Lett. 25 2664-2666
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Abstract Influences of the carrier concentration and mobility of heavily doped n-type Si80Ge20 alloys on the thermoelectrical power factor are investigated. The experimental results indicate that thermoelectrical power factors of 32--36μWcm-1K-2 could be consistently achieved with carrier concentrations of 2.1--2.9×1020cm-3 and carrier mobilities of 36--40cm2V-1s-1. However, many samples with suitable carrier concentrations do not always have high mobilities and high power factors. Some possible explanations for this behaviour are discussed.
Keywords: 81.05.Cy      81.05.Dz      81.05.Ea     
Received: 12 January 2008      Published: 26 June 2008
PACS:  81.05.Cy (Elemental semiconductors)  
  81.05.Dz (II-VI semiconductors)  
  81.05.Ea (III-V semiconductors)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2008/V25/I7/02664
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