| Original Articles |
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Enhancement of Field Emission Properties in La-Doped ZnO Films Prepared by Magnetron Sputtering |
| LI Jun1, WANG Ru-Zhi1,2, LAN Wei1,3, ZHANG Xing-Wang2, DUAN Zhi-Qiang1, WANG Bo1, YAN Hui1 |
| 1Laboratory of Thin Film Materials, College of Materials Science and Engineering, Beijing University of Technology, Beijing 1001242Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 1000833Department of Physics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 |
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| Cite this article: |
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LI Jun, WANG Ru-Zhi, LAN Wei et al 2008 Chin. Phys. Lett. 25 2657-2660 |
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Abstract Field emissions (FE) from La-doped zinc oxide (ZnO) films are both experimentally and theoretically investigated. Owing to the La-doped effect, the FE characteristic of ZnO films is remarkably enhanced compared with an undoped sample, and a startling low turn-on electric field of about 0.4V/μm (about 2.5V/μm for the undoped ZnO films) is obtained at an emission current density of 1μA/cm2 and the stable current density reaches 1mA/cm2 at an applied field of about 2.1V/μm. A self-consistent theoretical analysis shows that the novel FE enhancement of the La-doped sample may be originated from its smaller work function. Due to the effect of doping with La, the Fermi energy level lifts, electrons which tunnelling from surface barrier are consumedly enhancing, and then leads to a huge change of field emission current. Interestingly, it suggests a new effective method to improve the FE properties of film materials.
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| Keywords:
79.70.+q
85.45.Bz
81.07.Bc
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Received: 16 April 2008
Published: 26 June 2008
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| PACS: |
79.70.+q
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(Field emission, ionization, evaporation, and desorption)
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85.45.Bz
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(Vacuum microelectronic device characterization, design, and modeling)
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81.07.Bc
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(Nanocrystalline materials)
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