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Effect of GaAs/GaSb Combination Strain-Reducing Layer on Self-Assembled InAs Quantum Dots |
| JIANG Zhong-Wei, WANG Wen-Xin, GAO Han-Chao, LI Hui, YANG Cheng-Liang, HE Tao, WU Dian-Zhong, CHEN Hong, ZHOU Jun-Ming |
| Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 |
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| Cite this article: |
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JIANG Zhong-Wei, WANG Wen-Xin, GAO Han-Chao et al 2008 Chin. Phys. Lett. 25 2649-2652 |
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Abstract Self-assembled quantum dots capping with a GaAs/Gasb combined strain-reduced layer (CSRL) are grown by MBE. Their structural and optical properties are investigated by AFM and photoluminescence (PL). PL measurements have shown that stronger emission about 1.3μm can be
obtained by Sb irradiation and capping QDs with 3ML GaAs/2ML GaSb CSRL at room temperature. The full width at half maximum (FWHM) of the PL spectrum is about 20.2meV (19.9meV) at room temperature (20K), indicating that the QDs have high uniform, The result of FWHM is much better than the recently reported result, which is due to the fact that lower QD growth rate and growth interruption after the QDs deposition are adopted in our experiments.
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| Keywords:
78.67.Hc
81.07.Ta
78.55.Cr
81.15.Hi
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Received: 20 May 2008
Published: 26 June 2008
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