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Quantum-Confined Stark Effects in a Single GaN Quantum Dot |
| LIU Yong-Hui, WANG Xue-Feng, LI Shu-Shen |
| State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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| Cite this article: |
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LIU Yong-Hui, WANG Xue-Feng, LI Shu-Shen 2008 Chin. Phys. Lett. 25 2628-2630 |
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Abstract Using analytical expressions for the polarization field in GaN quantum dot, and an approximation by separating the potential into a radial and an axial, we investigate theoretically the quantum-confined Stark effects. The electron and hole energy levels and optical transition energies are calculated in the presence of an electric field in different directions. The results show that the electron and hole energy levels and the optical transition energies can cause redshifts for the lateral electric field and blueshifts for the vertical field. The rotational direction of electric field can also change the energy shift
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| Keywords:
73.21.La
73.40.Kp
71.23.An
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Received: 14 April 2008
Published: 26 June 2008
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| PACS: |
73.21.La
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(Quantum dots)
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73.40.Kp
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(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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71.23.An
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(Theories and models; localized states)
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