Chin. Phys. Lett.  2008, Vol. 25 Issue (7): 2625-2627    DOI:
Original Articles |
Magnetoresistance Probe of Ultrathin Mn5Ge3 Films with Anderson Weak Localization
CHEN Li-Jun, WANG De-Yong, ZHAN Qing-Feng, HE Wei, LI Qing-An
State Key Laboratory of Magnetism and Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190
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CHEN Li-Jun, WANG De-Yong, ZHAN Qing-Feng et al  2008 Chin. Phys. Lett. 25 2625-2627
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Abstract We present the magnetoresistance measurements of ultrathin Mn5Ge3}$ films with different thicknesses at low Temperatures. Owing to the lattice mismatch between Mn5Ge3 and Ge (111), the thickness of Mn5Ge3 films has a significant effect on the magnetoresistance. When the thickness of Mn is more than 72 monolayers (MLs), the magnetoresistance of the Mn5Ge3 films appears a peak at about 6kOe, which shows that the magnetoresistance results from the Anderson weak localization effect and the variable range hopping in the presence of a magnetic field. The magnetic and semiconducting properties indicate that the Mn5Ge3 film is a potential material for spin injection.
Keywords: 73.20.Fz      73.43.Qt     
Received: 18 March 2008      Published: 26 June 2008
PACS:  73.20.Fz (Weak or Anderson localization)  
  73.43.Qt (Magnetoresistance)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2008/V25/I7/02625
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CHEN Li-Jun
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