Chin. Phys. Lett.  2008, Vol. 25 Issue (6): 2285-2288    DOI:
Articles |
Improvement of High Temperature Characteristics for SiGeC p-i-n Diodes with Carbon Incorporation
GAO Yong;LIU Jing;YANG Yuan
Department of Electronic Engineering, Xi'an University of Technology, Xi'an 710048
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GAO Yong, LIU Jing, YANG Yuan 2008 Chin. Phys. Lett. 25 2285-2288
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Abstract Temperature-dependent characteristics of SiGeC p-i-n diodes are analysed and discussed. Based on the ISE data, the temperature-dependent physical models applicable for SiGeC/Si diodes are presented. Due to the addition of carbon into the SiGe system, the thermal stability of SiGeC diodes are improved remarkably. Compared to SiGe diodes, the reverse leakage current of SiGeC diodes is decreased by 97.1% at 400K and its threshold voltage shift is reduced over 65.3% with an increasing temperature from 300K to 400K. Furthermore, the fast and soft reverse recovery characteristics are also obtained at 400K for SiGeC diodes. As a result, the most remarkable feature of SiGeC diodes is the better high-temperature characteristics and this can be applied to high temperature up to 400K.
Keywords: 85.30.De      71.20.Nr      85.30.Kk     
Received: 27 February 2008      Published: 31 May 2008
PACS:  85.30.De (Semiconductor-device characterization, design, and modeling)  
  71.20.Nr (Semiconductor compounds)  
  85.30.Kk (Junction diodes)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2008/V25/I6/02285
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GAO Yong
LIU Jing
YANG Yuan
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