| Articles |
|
|
|
|
Three-Step Growth Optimization of AlN Epilayers by MOCVD |
PENG Ming-Zeng;GUO Li-Wei;ZHANG Jie;YU Nai-Sen;ZHU Xue-Liang;YAN
Jian-Feng;GE Bin-Hui;JIA Hai-Qiang;CHEN Hong,ZHOU Jun-Ming |
| Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100080 |
|
| Cite this article: |
|
PENG Ming-Zeng, GUO Li-Wei, ZHANG Jie et al 2008 Chin. Phys. Lett. 25 2265-2268 |
|
|
|
Abstract A three-step growth process is developed for depositing high-quality aluminium-nitride (AlN) epilayers on (001) sapphire by low pressure metalorganic chemical vapour deposition (LP-MOCVD). We adopt a low temperature (LT) AlN nucleation layer (NL), and two high temperature (HT) AlN layers with different V/III ratios. Our results reveal that the optimal NL temperature is 840--880°C, and there exists a proper growth switching from low to high V/III ratio for further reducing threading dislocations (TDs). The screw-type TD density of the optimized AlN film is just 7.86×106cm-2, about
three orders lower than its edge-type one of 2×109cm-2 estimated by high-resolution x-ray diffraction (HRXRD) and cross-sectional transmission electron
microscopy (TEM).
|
| Keywords:
81.05.Ea
81.15.Gh
61.10.-i
68.37.Lp
|
|
|
Received: 24 October 2007
Published: 31 May 2008
|
|
| PACS: |
81.05.Ea
|
(III-V semiconductors)
|
| |
81.15.Gh
|
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
|
| |
61.10.-i
|
|
| |
68.37.Lp
|
(Transmission electron microscopy (TEM))
|
|
|
|
|
|
[1] Nakamura S 1997 Solid State Commun. 102 237
[2] Mayes K et al 2004 Appl. Phys. Lett. 84 1046
[3] Zhang B et al 2003 J. Appl. Phys. 95 3170
[4] Hu X et al 2006 Phys. Status Solidi A 203 1815
[5] McClintock R et al 2005 Appl. Phys. Lett. 86011117
[6] Taniyasu Y, Kasu M and Makimoto T 2006 Nature 441 325
[7] Arulkumaran S et al 2002 Appl. Phys. Lett. 811131
[8] Bai J et al 2005 J. Cryst. Growth. 282 290
[9] Xi Y A et al 2006 Appl. Phys. Lett. 89 103106
[10] Yu H B, Caliskan D and Ozbay E 2006 J. Appl. Phys. 100 033501
[11] Hanlon A et al 2003 Jpn. J. Appl. Phys. 42L628
[12] Bai J et al 2006 Appl. Phys. Lett. 88 051903
[13] Heying B et al 1996 Appl. Phys. Lett. 68 643
[14] Amano H et al 1986 Appl. Phys. Lett. 48 353
[15] Nakamura S 1991 Jpn. J. Appl. Phys. 30 L1705
[16] Uehara K et al 2005 Jpn. J. Appl. Phys. 442987
[17] Wang H M et al 2002 Appl. Phys. Lett. 81 604
[18] Chierchia R et al 2003 J. Appl. Phys. 93 8918
[19] Zheng X H, et al 2003 J. Cryst. Growth. 25563
[20] Paduano Q S et al 2003 phys. stat. sol. (c) 02014
[21] Srikant V, Speck J S and Clarke D R 1997 J. Appl.Phys. 82 4286
[22] Lee S R et al 2005 Appl. Phys. Lett. 86241904 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
