| Articles |
|
|
|
|
High-Temperature Dielectric Response and Multiscale Mechanism of SiO2/Si3N4 Nanocomposites |
| HOU Zhi-Ling1,2;ZHANG Liang1;YUAN Jie1,3;SONG Wei-Li1;CAO Mao-Sheng1 |
| 1School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 1000812School of Science, Beijing University of Chemical Technology, Beijing 1000293School of Mathematics and Computer Science, Central University of Nationalities, Beijing 100081 |
|
| Cite this article: |
|
HOU Zhi-Ling, ZHANG Liang, YUAN Jie et al 2008 Chin. Phys. Lett. 25 2249-2252 |
|
|
|
|
Abstract The high-temperature dielectric properties of SiO2/Si3N4 nanocomposites are investigated theoretically and experimentally. Its permittivities and loss tangents at the temperature ranging from room temperature to 1300°C at 9.0GHz are measured by the resonant cavity method. The SiO2/Si3N4 nanocomposites show complex dielectric behaviour at elevated temperature, and a multi-scale model is proposed to describe the dependence of the dielectric properties in the SiO2/Si3N4 on its compositional variations. Such a theory is needed so that the available property measurements could be extrapolated to other operating frequencies and temperatures.
|
| Keywords:
77.84.Lf
81.07.Wx
|
|
|
Received: 01 February 2008
Published: 31 May 2008
|
|
|
|
|
|
|
|
[1] Thostenson E T, Li C Y and Chou T W 2005 CompositesSci. Technol. 65 491
[2]Zhou Y, Shi X L, Yuan J, Fang X Y and Cao M S 2007 Chin. Phys. Lett. 24 3264
[3]Shi X L, Yuan J, Zhou W, Rong J L and Cao M S 2007 Chin. Phys. Lett. 24 2994
[4] Yao S H, Dang Z M, Jiang M J and Xu H P 2007 Appl.Phys. Lett. 19 212901
[5] Cao M S, Shi X L, Fang X Y, Jin H B, Hou Z L and Zhou W2007 Appl. Phys. Lett. 91 203110
[6] Riley F L 2000 J. Am. Ceram. Soc. 83 245
[7] Yamada T 1993 Am. Ceram. Soc. Bull. 72 99
[8] Ault N N and Yeckley R L 1995 Am. Ceram. Soc. Bull. 74 153
[9] Jin H B, Cao M S, Chen Y X, Li J T and Agathopoulos S2008 Ceramics Int. (in press)
[10] Li J G, Cao M S and Zhang L 2005 J. Mater. Engin. 2 59 (in Chinese)
[11]Qi G J, Zhang C, Hu H, Cao F, Wang S, Zhou X and Jiang Y2005 J. Chin. Ceram. Soc. 33 1527 (in Chinese)
[12]Barta J and Manela M 1985 Mater. Sci. Engin. 71 265
[13] Cao M S, Jin H B, Li J G, Zhang L, Xu Q, Li X and Xiong LT 2006 Key Engin. Mater. 336 1239
[14] Kousik D and De S K 2007 Phys. Lett. A 361141
[15]Yuan J, Cui C, Hou Z L and Cao M S 2007 J. Chin.Harb. Inst. Tech. (New Series) 14 202
[16] Cai Y, Zhang L, Zeng Q, Cheng L and Xu Y 2006 Phys.Rev. B 74 174301
[17] Cao M S, Hou Z L, Shi X L and Wang F C 2007 High.Technol. Lett. 13 279
[18]Mantese J V, Micheli A L and Dungan D F 1996 J. Appl.Phys. 79 1655
[19] Bergman D J 1978 Phys. Rep. 43 378
[20] Bergman D J and Stroud D 1992 Solid State Phys. 46 147
[21]Zakri T, Laurent J P and Vauclin M 1998 J. Phys. D 31 1589
[22] Lee H C, Yu J and Gu G 1995 J. Phys. C 7 8785
[23] Bruggeman D A G 1935 Ann. Phys. 24 636 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
