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Structural Features of Boron-Doped Si(113) Surfaces Simulated by ab initio Calculations |
| LIAO Long-Zhong1;LIU Zheng-Hui2;ZHANG Zhao-Hui1 |
| 1State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 1008712Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 |
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| Cite this article: |
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LIAO Long-Zhong, LIU Zheng-Hui, ZHANG Zhao-Hui 2008 Chin. Phys. Lett. 25 2177-2180 |
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Abstract Based on ab initio calculations, boron-doped Si(113) surfaces have been simulated and atomic structures of the surfaces have been proposed. It has been determined that surface features of empty and filled states that are separately localized at pentamers and adatoms indicates a low surface density of B atoms, while it is attributed to heavy doping of B atoms at the
second layer that pentamers and adatoms are both present in an image of scanning tunnelling microscopy. B doping at the second layer should be balanced by adsorbed B or Si atoms beside the adatoms and inserted B interstitials below the adatoms.
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| Keywords:
68.03.Hj
68.35.Dv
68.37.Ef
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Received: 13 March 2008
Published: 31 May 2008
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| PACS: |
68.03.Hj
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(Liquid surface structure: measurements and simulations)
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68.35.Dv
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(Composition, segregation; defects and impurities)
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68.37.Ef
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(Scanning tunneling microscopy (including chemistry induced with STM))
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[1] Robertson L S, Jones K S et al 2000 J. Appl. Phys. 87 2910
[2] Omi H and Ogino T 1997 Appl. Phys. Lett. 712163
[3] Mussig H J, Dabrowski J et al 2001 Microelectron.Engin. 56 195
[4] Lyo I W, Kaxiras E and Avouris P 1989 Phys. Rev.Lett. 63 1261
[5] Liu Z H, Zhang Z H and Zhu X 2008 Phys. Rev. B 77 035322
[6] Zhang Z H, Sumitomo K J and Lin F 2005 Ultramicroscopy 105 16
[7] Zhang Z H and Sumitomo K J 2005 Surf. Sci. 57683
[8] Dabrowski J, Mussig H J and Wolff G J 1997 J. Vac.Sci. Technol. B 13 1597
[9] Laracuente A, Erwin S C and Whitman L J 1998 Phys.Rev. Lett. 81 5177
[10] Segll M D, Lindan P J D, et al 2002 J. Phys.:Condens. Matter 14 2717
[11] Perdew J P, Bruke K and Wang Y 1996 Phys. Rev. B 54 16533
[12] Monkhorst H J and Pack J D 1976 Phys. Rev. B 12 5188
[13] Tersoff J and Hamann D R 1983 Phys. Rev. Lett. 50 1998
[14] Hibino H and Ogino T 1997 Phys. Rev. B 6 409 |
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