Chin. Phys. Lett.  2008, Vol. 25 Issue (6): 2081-2084    DOI:
Articles |
Influence of Gamma-Ray Irradiation on Absorption and Fluorescent Spectra of Nd:YAG and Yb:YAG Laser Crystals
SUN Dun-Lu1,2;ZHANG Qing-Li1;XIAO Jing-Zhong2;LUO Jian-Qiao1;JIANG Hai-He1;YIN Shao-Tang1
1Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei 2300312Department of Ceramics and Glass Engineering, CICECO, University of Aveiro, Aveiro 3810-193, Portugal
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SUN Dun-Lu, ZHANG Qing-Li, XIAO Jing-Zhong et al  2008 Chin. Phys. Lett. 25 2081-2084
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Abstract We investigate the influence of gamma-ray irradiation on the absorption and fluorescent spectra of Nd3+:Y3Al5O12 (Nd:YAG) and Yb3+:Y3Al5O12 (Yb:YAG) crystals grown by the Czochralski method. Two additional absorption (AA) bands induced by gamma-ray irradiation appear at 255nm and 340nm. The former is contributed due to Fe3+ impurity, the latter is due to Fe2+ ions and F-type colour centres. The intensity of the excitation and emission spectra as well as the fluorescent lifetime of Nd:YAG crystal decrease after the irradiation of 100Mrad gamma-ray. In contrast, the same dose irradiation does not impair the fluorescent properties of Yb:YAG crystal. These results indicate that Yb:YAG crystal possesses the advantage over Nd:YAG crystal that has better
reliability for applications in harsh radiant environment.
Keywords: 42.70.Hj      61.72.Ji      61.80.Ed      78.55.-m     
Received: 26 November 2007      Published: 31 May 2008
PACS:  42.70.Hj (Laser materials)  
  61.72.Ji  
  61.80.Ed (γ-ray effects)  
  78.55.-m (Photoluminescence, properties and materials)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2008/V25/I6/02081
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SUN Dun-Lu
ZHANG Qing-Li
XIAO Jing-Zhong
LUO Jian-Qiao
JIANG Hai-He
YIN Shao-Tang
[1] Lacovara P and Choi H K et al 1991 Opt. Lett. 16 1089
[2] Ter-Mikirtychev V V and M. A. Dubinskii et al 2001 Opt. Commun. 97 403
[3] Xu X D and Zhao Z W et al. 2003 J. Cryst. Growth 255 338
[4] Brandle C D and Barns R L et al 1973 J. Cryst.Growth 20 1
[5] Saikawa J and Kurimura S 2002 Opt. Mater. 19169
[6] Xie W J and Kwon Y et al 2001 Opt. Laser Technol. 33 129
[7] Stokowski S E and Randles M H et al 1988 IEEE J.Quantum Electron. 24 934
[8] Rose T S and Hopkins M S et al 1995 IEEE. J. QuantumElectron. 31 1593
[9] Zharikov E V and Kuratev I I et al 1984 Bull. Acad.Sei. USSR: Phys. Ser. 48 103
[10] Dong Y J and Xu J et al 2006 Phys. Status Solidi. A 203 2496
[11] Dong Y J and Xu J et al 2007 Solid State Commun. 141 105
[12] Matkovski A and Durygin A et al 1999 Opt. Mater. 12 75
[13] Dong Y J and Xu J et al 2007 Phys. Status Solidi. A 204 608
[14] Dong Y J and Xu J et al 2006 Opt. Mater. 281377
[15] Matkovskii A and Sugak D et al 2000 J. AlloysCompd. 300/301 395
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