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Organic Light Emitting Diodes Using Doped Alq3 as the Hole-transport Layer |
| LIANG Chun-Jun1, WANG Yang2;YI Li-Xin1 |
| 1Key Laboratory of Luminescence and Optical Information (Ministry of Education), Beijing Jiaotong University, Beijing 1000442Key Laboratory of Opto-Electronic Technology and Intelligent Control (Ministry of Education), Lanzhou Jiaotong University, Lanzhou 730070 |
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| Cite this article: |
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LIANG Chun-Jun, WANG Yang, YI Li-Xin 2008 Chin. Phys. Lett. 25 1832-1835 |
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Abstract Effects of 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ)
doping on the hole conductivity of Alq3 layer are measured. In the hole-only device of Alq3, the current densities increase in 1--3 orders of magnitude upon doping with F4TCNQ, suggesting that the doping can effectively enhance the hole-injection and hole-transport ability of Alq3. An organic
light-emitting device using an F4TCNQ doped Alq3 layer as the hole-injection and hole-transport layer, and pristine Alq3 as the electron-transport and emitting layer is fabricated and characterized. Bright emission is achieved in the simple OLED with p-doped Alq3 as the hole-transport layer and the intrinsic Alq3 as the electron-transport and emitting layer. The emitting efficiency and brightness of the device are further improved by inserting a thin electron block layer to confine the carrier recombination zone in the middle of the organic layers.
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| Keywords:
72.80.Le
78.60.Fi
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Received: 05 November 2007
Published: 29 April 2008
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| PACS: |
72.80.Le
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(Polymers; organic compounds (including organic semiconductors))
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78.60.Fi
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(Electroluminescence)
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