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Silicon Dioxide Coating Deposited by PDPs on PET Films and Influence on Oxygen Transmission Rate |
| SUN Yun-Jin;FU Ya-Bo;CHEN Qiang;ZHANG Chun-Mei;SANG Li-Jun;ZHANG Yue-Fei |
| Laboratory of Plasma Physics and Materials, Beijing Institute of Graphic Communication, Beijing 102600 |
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| Cite this article: |
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SUN Yun-Jin, FU Ya-Bo, CHEN Qiang et al 2008 Chin. Phys. Lett. 25 1753-1756 |
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Abstract A silicon dioxide film is deposited on the polyethyleneterephtalate (PET) by a penning discharge plasma source at ambient temperature in a high vacuum chamber. Hexamethyldisiloxane and oxygen are adopted as precursor and reactive reagent to grow a nano-scale silicon dioxide layer on polymer
surfaces. For the chemical structure analysis x-ray photoelectron spectroscopy is performed to demonstrate the content of Si, O and C elements. It is noticed that a higher silicon concentration is contained if Ar plasma is used for pretreatment. X-ray diffraction analysis shows that a micro-crystal silicon dioxide is formed by peak patterns at 25.84° and 21.8°. The barrier properties examined by oxygen transmission rate show that the permeation
parameter of the 12-μm-thick PET film drastically decreases from 135cc/m2 per day for the control one to 0.713cc/m2 per day for the as-deposited one after Ar plasma treatment. The surface morphology related to the barrier properties of SiOx-coated polymers os also investigated by scanning electron microscopy and atomic force microscopy.
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| Keywords:
47.65.Md
52.25.Jm
52.25.Xz
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Received: 22 September 2007
Published: 29 April 2008
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