Chin. Phys. Lett.  2008, Vol. 25 Issue (4): 1400-1402    DOI:
Original Articles |
Atomic Diffusion in Cu/Si (111) and Cu/SiO2/Si (111) Systems by Neutral Cluster Beam Deposition
CAO Bo1;LI Gong-Ping1;CHEN Xi-Meng1;CHO Seong-Jin2;KIM Hee2
1School of Nuclear Science and Technology, Lanzhou University, Lanzhou 7300002Department of physics, Kyungsung University, Pusan 608-736, South Korea
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CAO Bo, LI Gong-Ping, CHEN Xi-Meng et al  2008 Chin. Phys. Lett. 25 1400-1402
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Abstract

The Cu films are deposited on two kinds of p-type Si (111) substrates by ionized cluster beam (ICB) technique. The interface reaction and atomic diffusion of Cu/Si (111) and Cu/SiO2/Si (111) systems are studied at different
annealing temperatures by x-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS). Some significant results are obtained: For the Cu/Si (111) samples prepared by neutral clusters, the interdiffusion of Cu and Si atoms occurs when annealed at 230°C. The diffusion coefficients of the samples annealed at 230°C and 500°C are 8.5×10-15cm2.s-1 and 3.0×10-14cm2.s-1, respectively. The formation of the copper-silicide phase is observed by XRD, and its intensity becomes stronger with the increase of annealing temperature. For the Cu/SiO2/Si (111) samples prepared by neutral clusters, the interdiffusion of Cu and Si atoms occurs and copper silicides are
formed when annealed at 450°C. The diffusion coefficients of Cu in Si are calculated to be 6.0×10-16cm2.s-1 at 450°C, due to the fact that the existence of the SiO2 layer suppresses the interdiffusion of Cu and Si.

Keywords: 68.35.Fx      82.80.Yc      61.10.Nz     
Received: 26 September 2007      Published: 31 March 2008
PACS:  68.35.Fx (Diffusion; interface formation)  
  82.80.Yc (Rutherford backscattering (RBS), and other methods ofchemical analysis)  
  61.10.Nz  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2008/V25/I4/01400
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Articles by authors
CAO Bo
LI Gong-Ping
CHEN Xi-Meng
CHO Seong-Jin
KIM Hee
[1] Murarka S P 1997 Mater. Sci. Eng. R19 87
[2] Kim D H et al 1996 Appl. Phys. Lett. 69 4182
[3] Chang C A 1990 J. Appl. Phys. 67 566
[4] Benouattas N et al 2000 Appl. Surf. Sci. 15379
[5] Nakahara T et al 1990 Nucl. Instrum. Methods B 45 467
[6] Sekar K et al 1992 Nucl. Instrum. Methods B 71 308
[7] Sekar K et al 1993 Nucl. Instrum. Methods B 73 63
[8] Cao B et al 2006 Acta Phys Sin. 55 6550 (inChinese)
[9] Takagi T 1988 Ionized-Cluster Beam Deposition andEpitaxy (Park Ridge, NJ: Noyes Publications)
[10] Takagi T 1988 Pure Appl. Chem. 60 781
[11] Takaoka G H et al 1989 Nucl. Instrum. MethodsB\, 37/38 882
[12] Yamada I 1995 Nucl. Instrum. Methods B 99 240
[13] Poate J M et al 1975 J. Appl. Phys. 46 4275.
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