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A Stable Porous Silicon Dielectric Reflector with a Photonic Band Gap Centred at 10μm |
| ZHANG Jie1;XU Shao-Hui1;YANG Shi-Qian1;WANG Lian-Wei1,2;CAO Zhi-Shen3;ZHAN Peng3;WANG Zhen-Lin3 |
| 1Laboratory of Polar Materials and Devices and Department of Electronic Engineering, School of Information Science and Technology, East China Normal University, Shanghai 2002412State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Shanghai 2000503National Laboratory of Solid State Microstructure, Nanjing University, Nanjing 210093 |
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| Cite this article: |
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ZHANG Jie, XU Shao-Hui, YANG Shi-Qian et al 2008 Chin. Phys. Lett. 25 1317-1320 |
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Abstract By pulsed anodic etching at low temperature, we prepared a porous silicon reflector with a photonic band gap centred in the long-wavelength infrared spectral region (centred at about 12μm). After proper oxidation process, the
stable reflector structure, which can reflect electromagnetic wave from 8μm to 12μm (centred at 10μm) within wide incidence angles (about 50°), is obtained. The wavelength shift of absorption peak of Si--H and Si--O shows the influence of oxidation process and indicates the stability of oxidized porous silicon dielectric reflector, which offers possible applications for the room temperature infrared sensor.
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| Keywords:
42.70.Qs
78.55.Mb
78.67.Pt
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Received: 16 October 2007
Published: 31 March 2008
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| PACS: |
42.70.Qs
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(Photonic bandgap materials)
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78.55.Mb
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(Porous materials)
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78.67.Pt
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(Multilayers; superlattices; photonic structures; metamaterials)
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[1] Rogalski A 2003 J. Appl. Phys. 93 4355
[2] Rogalski A 2002 Infrared Phys. Technol. 43 187
[3] Hogstrom H, Forssell G and Ribbing C G 2005 Opt. Eng. 026 001 44(2)
[4] Fink Y, Winn J N, Fan S, Chen C, Michel J, Joannopoulos JD and Thomas E L 1998 Science 1679 282
[5] Bisi O, Ossicini S and Pavesi L 2000 Surf. Sci. Rep. 1 38
[6] Mazzoleni C and Pavesi L 1995 Appl. Phys. Lett. 67 2983
[7]Pavesi L, Mazzoleni C, Tredicucci A and Pellegrini V 1995 Appl. Phys. Lett. 67 3280
[8] Zheng W H, Reece P, Sun B Q and Gal M 2003 Appl.Phys. Lett. 84 3519
[9] Herman A L and Philippe M F 2000 Appl. Phys. Lett. 77 3704
[10] Belmont O, Bellet D and Brechet Y 1996 J. Appl.Phys. 79 7586
[11] Hou X Y, Fan H L, Xu L and Zhang F L 1996 Appl.Phys. Lett. 68 17
[12] Billat S, Thonissen M, ArensFischer R, Berger M G, KrugerM and Luth H 1997 Thin Solid Films 22 297
[13] Setzu S, Ferrand P and Romestain R 2000 Mat. Sci.Eng. 34B 69-70
[14] Wang Z J, Zhang J, Xu S H, Wang L W, Zhan P, Cao Z S andWang Z L 2007 J. Phys. D: Appl. Phys. 40 4482
[15] Wolkin M V, Jorne J, Fauchet P M, Allan G and Delerue C1999 Phys. Rev. Lett. 82 197
[16] Seo Y H, Lee H J, Jeon H I, Oh D H, Nahm K S, Lee Y H,Suh E K and Lee H J 1993 Appl. Phys. Lett. 62 1812
[17] Born M and Wolf M 1980 Principles of Optics 6 edn(Oxford: Pergamon)
[18] Yeh P, Yariv A and Hong C S 1976 J. Opt. Soc. Am. 423B 67 |
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