Polarity-Free Resistive Switching Characteristics of Cu<SUB>x</SUB>O Films for Non-volatile Memory Applications

Chin. Phys. Lett.

2008, Vol. 25

Issue (3): 1087-1090 DOI:

Original Articles

Polarity-Free Resistive Switching Characteristics of Cu_xO Films for Non-volatile Memory Applications

LV Hang-Bing;ZHOU Peng;FU Xiu-Feng;YIN Ming;SONG Ya-Li;TANG Li,
TANG Ting-Ao;LIN Yin-Yin

School of Microelectronics and State Key Lab of ASIC & System, Fudan University, Shanghai 200433

Cite this article:

LV Hang-Bing, ZHOU Peng, FU Xiu-Feng et al 2008 Chin. Phys. Lett. 25 1087-1090

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Abstract Resistive switching characteristics of Cu_xO films grown by plasma oxidation process at room temperature are investigated. Both bipolar and unipolar stable resistive switching behaviours are observed and confirmed by repeated current--voltage measurements. It is found that the RESET current is dependent on SET compliance current. The mechanism behind this new
phenomenon can be understood in terms of conductive filaments formation/rupture with the contribution of Joule heating.

Keywords: 72.80.Ga 73.61.Ng

Received: 01 January 1900 Published: 27 February 2008

PACS:	72.80.Ga	(Transition-metal compounds)
	73.61.Ng	(Insulators)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2008/V25/I3/01087

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	LV Hang-Bing
	ZHOU Peng
	FU Xiu-Feng
	YIN Ming
	SONG Ya-Li
	TANG Li
	TANG Ting-Ao
	LIN Yin-Yin

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