Chin. Phys. Lett.  2008, Vol. 25 Issue (2): 475-478    DOI:
Original Articles |
Photodetachment of H- near a Partially Reflecting Surface---I
A. Afaq
Department of Physics, COMSATS Institute of Information Technology Lahore, Pakistan
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A. Afaq 2008 Chin. Phys. Lett. 25 475-478
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Abstract Theoretical and interpretative study on the subject of photodetachment of H- near a partially reflecting surface is presented, and the absorption effect of the surface is investigated on the total and differential cross sections using a
theoretical imaging method. To understand the absorption effect, a reflection parameter K is introduced as a multiplicative factor to the outgoing detached-electron wave of H- propagating towards the wall. The reflection parameter measures, how much electron wave would reflect from the surface; K=0 corresponds to no reflection and K=1 corresponds to the total reflection.
Keywords: 32.80.Gc     
Received: 17 September 2007      Published: 30 January 2008
PACS:  32.80.Gc (Photodetachment of atomic negative ions)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2008/V25/I2/0475
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A. Afaq
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