| Original Articles |
|
|
|
|
Structural and Electrical Properties of PZT/PVDF Piezoelectric Nanocomposites Prepared by Cold-Press and Hot-Press Routes |
| ZHANG De-Qing1,2, WANG Da-Wei2, YUAN Jie3, ZHAO Quan-Liang2, WANG Zhi-Ying2, CAO Mao-Sheng2 |
| 1College of Chemical Engineering, Qiqihar University, Qiqihar 1610062School of Material Science and Engineering, Beijing Institute of Technology, Beijing 1000813School of Information Engineering, Central University for Nationality, Beijing 100081 |
|
| Cite this article: |
|
ZHANG De-Qing, WANG Da-Wei, YUAN Jie et al 2008 Chin. Phys. Lett. 25 4410-4413 |
|
|
|
|
Abstract The 0-3 PZT/PVDF piezoelectric composites are prepared separately by hot-press and cold-press processes. The effects of the PZT content and the shaping-process on the composites are studied. The experimental results indicate that composites with 70% PZT nanopowders prepared by the hot-press method exhibit excellent piezoelectric and dielectric properties. The maxima of d33 and ε of the composites prepared by hot-press method are about 30% and 65% higher than those prepared by the cold-press method, respectively. This is mainly attributed to the favourable coupling of the two materials in the process of the hot press and the formation of the β-type PVDF, which possesses better electric properties.
|
| Keywords:
77.84.Lf
77.65.-j
|
|
|
Received: 06 October 2008
Published: 27 November 2008
|
|
| PACS: |
77.84.Lf
|
(Composite materials)
|
| |
77.65.-j
|
(Piezoelectricity and electromechanical effects)
|
|
|
|
|
|
[1] Lubitz K, Wolff A and Peru G 1992 Ferroelectrics 133 21
[2] Liu X, Xiong C, Sun H, Dong L, li R and Liu Y 2006 Mat. Sci. Eng. B 127 261
[3] Matthias D and Mohammed E S 2008 Sensors Actuators A 143 329
[4] Lin H B, Cao M S, Zhao Q L, Shi X L, Wang D W and Wang FC 2008 Scripta Mater. 59 780
[5] Zewdie H and Brouers F 1990 J. Appl. Phys. 68713
[6] Shrout T R and Schulze W A 1979 Mater. Res. Bull. 14 1553
[7] Dias C J and Das-Gupta D K 1994 Key Eng. Mater. 92{\& 93 217
[8] Hilczer B, Kulek J, Markiewicz E, Kosec Ma and Malic B2002 J. Non-Cryst. Solids 305 167
[9] Ahmed S and Jones F R 1990 J. Mater. Sci. 254933
[10] Tian S, Cui F and Wang X 2008 Mater. Lett. 623859
[11] Dias C J and Das-Gupta D K 1996 IEEE Trans. Dielect.Electr. Insulat. 5 706
[12] Newnham R E, Skinner D P and Cross L E 1978 Mater.Res. Bull. 13 525
[13] Lin H B, Cao M S, Yuan J, Wang D W, Zhao Q L and Wang FC 2008 Chin. Phys. B 17 4323
[14] Bobnar V, Vodopivec B, Kutnjak Z, Kosec M, Levstik A andHilczer B 2004 Ferroelectrics 304 833
[15] C.K. Wong and F.G. Shin 2005 J. Appl. Phys. 97 024104-1
[16] Kwok K W, Wong C K, Zheng R and Shin F G 2005 Appl.Phys. A 81 217
[17] Dietze M, Krause J, Solterbeck C H and Es-Souni M 2007 J. Appl. Phys. 101 054113-1
[18] Ploss B, Ng W Y, Chan H L W, Ploss B and Choy C L 2001 Compos. Sci. Technol. 61 957
[19] Lam K H, Chan H K W, Luo H S, Yin Q R, Yin Z W and Choy CL 2003 Microelectron. Eng. 66 792
[20] Lam K H and Chan H K W 2005 Compos. Sci. Technol. 65 1107
[21] Satish B, Sridevi K and Vijaya M S 2002 J. Phys. D:Appl. Phys. 35 2048
[22] Lam K S, Wong Y W, Tai L S, Poon Y M and Shin F G 2004 J. Appl. Phys. 96 3896
[23] Zhang D Q, Wang S J, Sun H, Wang X L and Cao M S 2007 J. Sol-Gel. Sci. Technol. 41 157 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
