| Original Articles |
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Spin Coulomb Dragging Inhibition of Spin-Polarized Electric Current Injecting into Organic Semiconductors |
ZHAO Jun-Qing, QIAO Shi-Zhu, JIA Zhen-Feng, ZHANG Ning-Yu, JI Yan-Ju,
PANG Yan-Tao, CHEN Ying, FU Gang |
| School of Science, Shandong Jianzhu University, Jinan 250101 |
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| Cite this article: |
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ZHAO Jun-Qing, QIAO Shi-Zhu, JIA Zhen-Feng et al 2008 Chin. Phys. Lett. 25 4381-4384 |
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Abstract We introduce a one-dimensional spin injection structure comprising a ferromagnetic metal and a nondegenerate organic semiconductor to model electric current polarizations. With this model we analyse spin Coulomb dragging (SCD) effects on the polarization under various electric fields, interface and conductivity conditions. The results show that the SCD inhibits the current polarization. Thus the SCD inhibition should be well considered for accurate evaluation of current polarization in the design of organic spin devices.
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| Keywords:
72.80.Le
72.25.Dc
72.25.Hg
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Received: 29 August 2008
Published: 27 November 2008
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| PACS: |
72.80.Le
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(Polymers; organic compounds (including organic semiconductors))
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72.25.Dc
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(Spin polarized transport in semiconductors)
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72.25.Hg
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(Electrical injection of spin polarized carriers)
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