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Composition Dependence of Surface Phonon Polariton Mode in Wurtzite InxGa1-xN (0≤x≤1) Ternary Alloy |
| S. S. Ng, Z. Hassan, H. Abu Hassan |
| Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Minden, Pulau Pinang, Malaysia |
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| Cite this article: |
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S. S. Ng, Z. Hassan, H. Abu Hassan 2008 Chin. Phys. Lett. 25 4378-4380 |
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Abstract We present a theoretical study on the composition dependence of the surface phonon polariton (SPP) mode in wurtzite structure α-InxGa1-xN ternary alloy over the whole composition range. The SPP modes are obtained by the theoretical simulations by means of an anisotropy model. The results reveal that the SPP mode of α-InxGa1-xN semiconductors exhibits one-mode behaviour. From these data, composition dependence of the SPP mode with bowing parameter of -28.9cm-1 is theoretically obtained..
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| Keywords:
71.36.+c
78.30.Bh
78.66.Fd
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Received: 12 September 2008
Published: 27 November 2008
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| PACS: |
71.36.+c
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(Polaritons (including photon-phonon and photon-magnon interactions))
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78.30.Bh
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78.66.Fd
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(III-V semiconductors)
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