Chin. Phys. Lett.  2008, Vol. 25 Issue (12): 4364-4367    DOI:
Original Articles |
Effect of Nitridation on Morphology, Structural Properties and Stress of AlN Films
HU Wei-Guo, JIAO Chun-Mei, WEI Hong-Yuan, ZHANG Pan-Feng, KANG Ting-Ting, ZHANG Ri-Qing, LIU Xiang-Lin
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
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HU Wei-Guo, JIAO Chun-Mei, WEI Hong-Yuan et al  2008 Chin. Phys. Lett. 25 4364-4367
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Abstract We investigate effects of nitridation on AlN morphology, structural properties and stress. It is found that 3min nitridation can prominently improve AlN crystal structure, and slightly smooth the surface morphology. However, 10min nitridation degrades out-of-plane crystal structure and surface morphology instead. Additionally, 3-min nitridation introduces more tensile stress (1.5GPa) in AlN films, which can be attributed to the weaker islands 2D coalescent. Nitridation for 10min can introduce more defects, or even forms polycrystallinity interlayer, which relaxes the stress. Thus, the stress in AlN with 10min nitridation decreases to -0.2GPa compressive stress.
Keywords: 68.55.-a      81.15.Kk      81.05.Ea     
Received: 04 August 2008      Published: 27 November 2008
PACS:  68.55.-a (Thin film structure and morphology)  
  81.15.Kk (Vapor phase epitaxy; growth from vapor phase)  
  81.05.Ea (III-V semiconductors)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2008/V25/I12/04364
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HU Wei-Guo
JIAO Chun-Mei
WEI Hong-Yuan
ZHANG Pan-Feng
KANG Ting-Ting
ZHANG Ri-Qing
LIU Xiang-Lin
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