| Original Articles |
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Realization of Ultraviolet Electroluminescence from ZnO Homojunction Fabricated on Silicon Substrate with p-Type ZnO:N Layer Formed by Radical N2O Doping |
| SUN Jing-Chang, LIANG Hong-Wei, ZHAO Jian-Ze, BIAN Ji-Ming, FENG Qiu-Ju, WANG Jing-Wei, ZHAO Zi-Wen, DU Guo-Tong |
| School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 |
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| Cite this article: |
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SUN Jing-Chang, LIANG Hong-Wei, ZHAO Jian-Ze et al 2008 Chin. Phys. Lett. 25 4345-4347 |
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Abstract ZnO homojunction light-emitting diodes are fabricated on Si(100) substrates by plasma assisted metal organic chemical vapour deposition. A p-type layer of nitrogen-doped ZnO film is formed using radical N2O as the acceptor precursor. The n-type ZnO layer is composed of un-doped ZnO film. The device exhibits desirable rectifying behaviour with a turn-on voltage of 3.3V and a reverse breakdown voltage higher than 6V. Distinct electroluminescence emissions centred at 395nm and 490nm are detected from this device at forward current higher than 20mA at room temperature.
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| Keywords:
61.72.Uj
82.33.Ya
78.60.Fi
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Received: 07 September 2008
Published: 27 November 2008
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| PACS: |
61.72.uj
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(III-V and II-VI semiconductors)
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82.33.Ya
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(Chemistry of MOCVD and other vapor deposition methods)
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78.60.Fi
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(Electroluminescence)
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[1] Zhong H M, Lu W, Sun Y and Li Z F 2007 Chin. Phys.Lett. 24 2678
[2] Look D C, Reynolds D C et al 2002 Appl. Phys. Lett. 81 1830
[3] LV J G, YE Z Z et al 2002 Chin. Phys. Lett. 19 1494
[4] Tsukazaki A, Kubota M et al 2005 Jpn. J. Appl. Phys.II 44 L643
[5] Liu W, Gu S L et al 2006 Appl. Phys. Lett. 88092101
[6] Ryu Y R, Lee T S et al 2006 Appl. Phys. Lett. 88 241108
[7] Jiao S, Zhang Z Z et al 2006 Appl. Phys. Lett. 88 031911
[8] Sun J C, Zhao J Z et al 2007 Appl. Phys. Lett. 90 121128
[9] Chu S, Lim J H et al 2008 Appl. Phys. Lett. 92152103
[10] Yang T P, Bian J M et al 2008 J. Mater. Process.Tech. 204 481
[11] Sun J C, Bian J M et al 2007 Appl. Surf. Sci. 253 5161
[12] Bylander E G 1978 J. Appl. Phys. 49 1188
[13] Look D C, Hemsky J W, Sizelove J R 1999 Phys. Rev.Lett. 82 2552
[14] Alivov,Y I, Van Nostrand J E, Look D C, Chukichev M V,Ataev B M 2003 Appl. Phys. Lett. 83 2943
[15] Sun Y, Ketterson J B and Wong G K L 2000 Appl. Phys.Lett. 77 2322
[16] Bian J M, Liu W F, Sun J C and Liang H W 2007 J.Mater. Process. Tech. 184 451
[17] Chen P, Ma X Y and Yang D 2007 J. Appl. Phys. 101 053103 |
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